Large area epitaxial method for high brightness 655 nm AlGaAs double heterostructure red LEDs

Shea, J.; You, Baogui; Kao, J. Y.; Deng, Jiang; Chang, Yi-Wei; Chen, T.P.

doi:10.1016/0022-0248(93)90381-6

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Cited by 9 publications

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Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer

Jeganathan

Ramakrishnan

Kumar

1999

Cryst. Res. Technol.

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Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured and compared with conventional LPE grown AlGaAs epitaxial layer. The behaviour of GaAs and AlAs like LO phonons has been found to vary with the aluminum composition in the grown layer. Raman peak positions have been observed to shift to lower wavenumber in GaAs like LO phonon and higher wavenumber side of AlAs like LO phonon. Aluminum free features have been noticed in IEE grown AlGaAs (x > 0.8) hetero epitaxial layers.

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Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer

Jeganathan

Ramakrishnan

Kumar

1999

Cryst. Res. Technol.

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Epitaxial Growth

Kuech

Tischler²

2013

Materials Science and Technology

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The sections in this article are Introduction The Epitaxial Process: General Features Surface Thermodynamics and Surface Structure Surface Transport and Incorporation Growth Behaviors Chemical Vapor Deposition: Technology and Issues Reactors: Mass, Fluid, and Thermal Transport Fluid Behavior and Reactor Design Mass and Thermal Transport Gas Phase and Surface Chemistry Liquid Phase Epitaxy ( LPE ) Technology LPE Growth Procedures Molecular Beam Epitaxy ( MBE ) Technology Specific Epitaxial Systems: Materials and Growth Issues Silicon Chemical Vapor Deposition Silicon Chemical Vapor Deposition: Surface and Reactor Considerations Silicon Chemical Vapor Deposition: Growth Chemistry Heterojunction Formation Impurity Incorporation Ga As MBE Growth of Al Ga As by LPE In P Metal Organic Vapor Phase Epitaxy ( MOVPE ) Acknowledgements

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Epitaxial Growth

Kuech

Tischler²

2000

Handbook of Semiconductor Technology Set

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Large area epitaxial method for high brightness 655 nm AlGaAs double heterostructure red LEDs

Cited by 9 publications

References 6 publications

Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer

Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer

Epitaxial Growth

Epitaxial Growth

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