Large-area multicrystalline silicon solar cell fabrication using reactive ion etching (RIE)

Yoo, Jinsu; Yu, Gwon-Jong; Yi, Junsin

doi:10.1016/j.solmat.2010.03.029

Cited by 132 publications

(63 citation statements)

References 2 publications

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“…Up to now, there are three kinds of way to fabricate b-Si: laser texturing [3], reactive ion etching (RIE) [4], and metal-catalyzed chemical etching (MCCE) [5]. Among these, RIE and MCCE techniques have obtained high expectations.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the Surface Structure on Black Silicon for Surface Passivation

2017

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Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al2O3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH4OH/H2O2/H2O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

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Section: Introductionmentioning

confidence: 99%

Optimization of the Surface Structure on Black Silicon for Surface Passivation

2017

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“…One surface of the substrate was etched by reactive ion etching process, which was described in detail in reference (Yoo et al 2011). Prior to plating, the substrates were cleaned with acetone in an ultrasonic bath for 5 min.…”

Section: Methodsmentioning

confidence: 99%

Effect of plating temperature on electroless amorphous Ni–P film on Si wafers in an alkaline bath solution

Jiang

2017

Appl Nanosci

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Nickel-phosphorus (Ni-P) film was deposited by electroless process on the surface of p-type polycrystalline silicon at the temperature of 60-80°C and pH value of 10.0. The effect of plating temperature on morphology, crystallographic structure, chemical composition and deposition rate of Ni-P film was studied. Microstructure and morphology of surface and cross section of the film were examined by a scanning electron microscopy and optical microscopy. The crystallographic structure and chemical composition of the film were determined by X-ray diffraction and energy dispersive spectroscopy, respectively. The results show that electroless Ni-P films were composed of the amorphous phase. The stable value P-content of the film was maintained at about 12 wt% with increasing bath temperature. The film surface was dense, and no cracking was found at 60 and 80°C. However, the film deposited at 70 and 80°C had a poor adherence to the substrate with evidence of delamination. The deposition rate of the film was increased with increasing plating temperature. At the same time, the deposition mechanism of the film on silicon substrate in the alkaline bath solution was addressed.

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“…Wet texturing has been commonly used in the single crystal silicon (100) solar cell process by the acidic or alkaline solution [6][7][8]. The dry etching methods, such as mechanical diamond saw cutting [9], porous-Si etching [10], laserstructuring [11], photo-lithographically defined etching [12] and masked or maskless reactive ion etching (RIE) texturing, [13][14][15][16][17][18][19][20] etc. have recently been studied to help prepare the ideal surface textures.…”

Section: Introductionmentioning

confidence: 99%