Large cubic tin sulfide–tin selenide thin film stacks for energy conversion

Barrios‐Salgado, Enue; Rodríguez-Guadarrama, L. A.; Garcia-Angelmo, A. R.; Alvarez, José; Nair, M. T. S.; Nair, P. K.

doi:10.1016/j.tsf.2016.07.048

Cited by 52 publications

(44 citation statements)

References 21 publications

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“…Synthesis of SnS‐CUB thin film basic layer on Corning microscope glass substrates treated in a dilute Na 2 S solution is the significant procedure to deposit SnSe thin film stacks of cubic phase, which is explained in ref. in detail. The thickness of SnS‐CUB film deposited by this technique is in nanometer regime.…”

Section: Preparation Methodsmentioning

confidence: 96%

“…SnSe‐CUB thin films can be obtained on SnS‐CUB thin film basic layer through the solution‐phase sequential deposition method . Synthesis of SnS‐CUB thin film basic layer on Corning microscope glass substrates treated in a dilute Na 2 S solution is the significant procedure to deposit SnSe thin film stacks of cubic phase, which is explained in ref.…”

Section: Preparation Methodsmentioning

confidence: 99%

“…However, as shown in Table 2 , the direct bandgap demonstrated by thin films is greater than that of bulk as a result of quantum confinement effect . In cubic SnSe (SnSe‐CUB), the obtained optical bandgap of ≈1.4 eV is larger than that of bulk orthorhombic SnSe …”

Section: Structure and Bondingmentioning

confidence: 99%

“…Large cubic structured SnSe (SnSe‐CUB), which is supposed to be as stable as orthorhombic SnSe, has also been identified in nanocrystalline materials and in thin films recently. In addition, the large cubic tin sulfide–tin selenide thin film stacks reported in 2016 are also promising in photovoltaic and thermoelectric applications …”

Section: Introductionmentioning

confidence: 99%

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Tin Selenide (SnSe): Growth, Properties, and Applications

et al. 2018

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The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b‐axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li‐ion batteries, and other emerging fields are also discussed.

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Section: Preparation Methodsmentioning

confidence: 96%

Section: Preparation Methodsmentioning

confidence: 99%

Section: Structure and Bondingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tin Selenide (SnSe): Growth, Properties, and Applications

et al. 2018

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“…Until now, most research on SnS for solar cells has been conducted using orthorhombic phase ( Pnma ) SnS thin films. Recently, thin film growth of cubic phase ( P2 1 3 ) SnS with a large lattice constant ( a = 1.15–1.17 nm) by using different growth techniques such as atomic layer deposition, chemical deposition, and thermal evaporation has been reported. For example Sanal et al deposited cubic SnS by chemical deposition and measured the band diagram of Zn(O,S)/cubic SnS by XPS measurement.…”

Section: Introductionmentioning

confidence: 99%

Sulfurization Growth and HCl Etching Processes for Cubic‐Phase SnS Thin Films

Tosuke

Sugiyama

2019

Physica Status Solidi (a)

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The synthesis of cubic‐phase SnS thin films using a sulfurization technique, in particular, the relationship between sulfurization conditions and extra phase contamination such as orthorhombic SnS, Sn2S3, or SnS2 is investigated. In case of SnS films sulfurized for 70–90 min, both cubic and orthorhombic SnS‐related diffractions are observed. Sulfurization time longer than 120 min, orthorhombic SnS and SnS2‐related diffractions are observed because the S vapor reacts with the SnS layer and forms a stable extra phase as SnS2. A single phase of cubic SnS is obtained via 18%‐HCl‐solution etching for 90 min without heating. Since the formation energy of cubic SnS is the same as that of orthorhombic SnS, obtaining single‐phase cubic SnS is difficult by optimizing a sulfurization and/or post‐thermal process. Moreover, because the band discontinuity of CdS/cubic SnS speculates a TYPE‐II band diagram, highly efficient SnS solar cells cannot be realized using CdS as an n‐type layer.

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