Large-grained polycrystalline silicon films on glass by argon-assisted ECRCVD epitaxial thickening of seed layers

Ekanayake, G.; Quinn, T.F.J.; Reehal, H. S.; Rau, B.; Gall, S.

doi:10.1016/j.jcrysgro.2006.11.327

Cited by 13 publications

(3 citation statements)

References 13 publications

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“…This is favorable for the subsequent growth of BaSi 2 layers, because a-axis-oriented BaSi 2 films can be epitaxially grown on Si(111) with a lattice mismatch of approximately 1% [11][12][13][14][15]. However, the growth of (1 0 0)-oriented Si layers has been also reported [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Tsukada

Matsumoto

Sasaki

et al. 2009

Journal of Crystal Growth

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a b s t r a c tWe have prepared (111)-oriented Si layers on SiO 2 (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (111) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO 2 ), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si.The crystal orientation of the Si layers was confirmed by yÀ2y, 2y XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi 2 films formed on the (111)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi 2 were also evaluated.

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Section: Introductionmentioning

confidence: 99%

Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Tsukada

Matsumoto

Sasaki

et al. 2009

Journal of Crystal Growth

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“…However, performance has remained poor with best V oc values of $420 mV and efficiencies of $2% in small area cells with $2 mm thick absorber layers. 13 Plasma deposition techniques such as electron cyclotron resonance CVD (ECRCVD) can also be used to provide low energy ion bombardment of the growth surface to increase adatom surface mobilities and reduce epitaxial growth temperatures to below 600 C. Epitaxial thickening of AIC seed layers by ECRCVD has been reported by several authors including Gall et al 25 and Ekanayake et al 38 The best quality epitaxial layers below 600 C are obtained on (100) oriented Si wafers. Typically, epitaxy breaks down above a thickness of $2.5 mm on (100) Si and at much lower thicknesses for other orientations.…”

Section: Absorber Growth On Seed Layers and Device Resultsmentioning

confidence: 99%

Crystalline Silicon Thin Film and Nanowire Solar Cells

Reehal

Ball

2014

Materials Challenges

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This chapter reviews recent developments in the field of large grain size crystalline silicon thin film and silicon nanowire solar cells. Both technologies offer considerable potential for photovoltaics if they can be realised with adequate material quality on cheap substrates such as glass. The main methods for forming thin polycrystalline silicon (poly-Si) films on glass are described. These include thermal solid phase crystallisation, liquid phase crystallisation and epitaxial thickening of crystalline seed layers. The corresponding progress made in device technology is outlined. Some recent work on poly-Si film and solar cell formation on higher temperature substrates is also discussed, together with progress on thin monocrystalline layers produced by epitaxy or lift-off from Si wafers. Plasmonic enhancement of solar cells has attracted considerable interest in recent years. An account is given of developments relating to thin crystalline Si solar cells. Finally, the progress made in the fabrication of Si nanowires and microwires, and their deployment in photovoltaic devices is discussed. Both bottom–up and top–down methods of wire formation are considered. Considerable progress has been made in both planar and wire cell technologies, though the latter is at an earlier stage of development and significant research challenges remain for both. However, with further improvements in material quality and light trapping, excellent prospects exist for a cost-effective thin film crystalline Si technology exceeding 15% efficiency. This will offer all the advantages of Si including stability, non-toxicity and high abundance.

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“…The obtained poly-Si is heavily Al-doped, that is p-type, and has a large grain size over 10 m and exhibits a preferential (100) crystallographic orientation, which is favorable for the subsequent epitaxial thickening at low temperatures. 8,9) However, the issue in this method is a series resistance of solar cells because sheet resistance of Al-doped p-layer which has limited the cell efficiency in the previous report. 10) In this study, a novel ALILE process has been proposed for improving the efficiency.…”

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confidence: 99%

Inverted Aluminum-Induced Layer Exchange Method for Thin Film Polycrystalline Silicon Solar Cells on Insulating Substrates

Kuraseko

Orita

Koaizawa

et al. 2008

Appl. Phys. Express

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In order to achieve high efficiency thin film polycrystalline silicon (poly-Si) solar cells on insulating substrate, we have developed a novel crystallization method of amorphous silicon (a-Si), an inverted aluminum-induced layer exchange (inverted-ALILE) method, where a metallic aluminum layer remains between the crystallized p þ -layer and a glass substrate to function a back contact in contrast to the conventional ALILE method. Crystallization process of a-Si during inverted-ALILE was observed in-situ by optical microscope. The crystallized film was analyzed using Raman measurement, X-ray photoelectron spectroscopy (XPS) and electron back scatter diffraction (EBSD). Those analyses indicated poly-Si thin film with large grain size and preferential orientation of (100). The prepared poly-Si layer was applied to thin film solar cell and we confirmed a significant improvement in series resistance as compared to a conventional ALILE method.

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Large-grained polycrystalline silicon films on glass by argon-assisted ECRCVD epitaxial thickening of seed layers

Cited by 13 publications

References 13 publications

Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

Crystalline Silicon Thin Film and Nanowire Solar Cells

Inverted Aluminum-Induced Layer Exchange Method for Thin Film Polycrystalline Silicon Solar Cells on Insulating Substrates

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