Large magnetic anisotropy predicted for rare-earth-free 
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Zhao, Xin; Wang, Cai Zhuang; Yao, Yongxin; Ho, Kai Ming

doi:10.1103/physrevb.94.224424

Cited by 51 publications

(22 citation statements)

References 30 publications

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“…Following our results in Figure (a), we anticipate a slight increase of K in the green contour area ( a ≈5.63 Å and c ≈6.45 Å). Potential further increase of the magnetic anisotropy of Fe 16 N 2 is also predicted by other studies …”

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confidence: 83%

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device

Yang

Jamali

et al. 2019

Physica Rapid Research Ltrs

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Realization of sub-10 nm spin-based logic and memory devices relies on the development of magnetic materials with perpendicular magnetic anisotropy that can provide low switching current and large thermal stability simultaneously. In this work, the authors report on one promising candidate, Fe 16 N 2 , a heavy-metal-free, non-interface perpendicular magnetic material and demonstrate a perpendicularly magnetized current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) device based on Fe 16 N 2 . The crystallinebased perpendicular anisotropy of Fe 16 N 2 in the CPP GMR device is measured to be about 1.9 Â 10 6 J m À3 (1.9 Â 10 7 erg cm À3 ), which is sufficient to maintain the thermal stability of sub-10 nm devices. A first principle calculation is performed to support this large magnitude of the perpendicular anisotropy. Moreover, the Gilbert damping constant of the Fe 16 N 2 thin film (α %0.01) measured by ferromagnetic resonance (FMR) is lower than for most existing materials with crystalline perpendicular magnetic anisotropy. The non-interface perpendicular anisotropy and low damping properties of Fe 16 N 2 may offer a pathway for future spintronics logic and memory devices.Giant/Tunnel magnetoresistance (GMR/TMR) devices with current-perpendicular-to-plane (CPP) geometry have been attracting substantial attention due to their potential applications in spin-transfer-torque RAM (STT-RAM) and logic devices. [1,2] Particularly, the CPP GMR/TMR devices with perpendicular magnetic anisotropy (PMA) hold great promise for much higher areal densities than in-plane devices for spin-based memory and logic circuits. [3][4][5] In comparison with the devices utilizing in-plane magnetic materials, PMA-based magnetic devices have large thermal stability in small dimension as well as no constraint on cell aspect ratio. Furthermore, studies demonstrate that perpendicularly magnetized GMR/TMR devices have lower critical current and faster switching speed than in-plane magnetized devices. [6,7] These characteristics facilitate low-power consumption in memory or logic circuit operations.PMA of thin films can be introduced by reduced magnetic symmetry in out-ofplane direction. It can be fulfilled either by crystal lattice asymmetry or by interface coupling between ultra-thin films. Among those PMA materials used in GMR/ TMR, L1 0 ordered alloys [5,8] and multilayers based on transition

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confidence: 83%

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device

Yang

Jamali

et al. 2019

Physica Rapid Research Ltrs

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“…Among these, the Co 16 N 2 phase is being Electronic supplementary material The online version of this article (https ://doi.org/10.1007/s4245 2-019-1808-2) contains supplementary material, which is available to authorized users. explored recently [24], Co 2 N and Co 3 N have been studied by several co-workers [25][26][27][28][29]. The N-rich CoN 2 phase was recently synthesized under high pressure high temperature (30 GPa, 1600 K) [30].…”

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confidence: 99%

X-ray absorption spectroscopy study of cobalt mononitride thin films

et al. 2019

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We present a comprehensive study to resolve the debate about the structure of cobalt mononitride (CoN). In contradiction with theoretical predictions, experimentally CoN has been claimed to synthesize in a rock-salt (RS) and in a zincblende (ZB)-type structure under ambient pressure and temperature. Utilizing X-ray absorption near-edge spectroscopy (XANES) at Co and N K-edges and extended X-ray absorption fine structure (EXAFS) at Co K-edge, we investigated the structure of CoN in detail. The presence of a strong pre-edge feature at the Co K-edge and the absence of t 2 feature at the N K-edge indicate towards the tetrahedral coordination that is expected in the ZB-type structure of CoN. Theoretical simulations of XANES spectra unambiguously confirm the ZB-type structure in CoN. Also from EXAFS data, we found that CoN and Co-Co bond distances match well with ZB-CoN. Magnetic properties of CoN were examined using polarized neutron reflectivity and bulk magnetization measurements. It was found that CoN sample exhibits a paramagnetic behaviour as expected in ZB-CoN. Obtained results clearly demonstrate that CoN indeed crystalizes in the ZB-type structure, and the possibility of the RS-type CoN can be ruled out under ambient pressure and temperature. It is anticipated that the information about the structure of CoN can be utilized for its usage in emerging areas such as low-cost catalyst in oxygen and hydrogen evaluation reactions, high capacity anode in ion batteries and in photovoltaic applications.

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“…Recently, several Fe-based RE-free compounds such as Fe-Co-X (X being B, C or N) [2][3][4][5][6][7], Fe(Co)Pt [8], and Fe 2 P [9] have been studied intensively as potential permanent magnet materials. These studies have demonstrated that the MAE of Fe can be improved substantially by allowing with other non-magnetic elements.…”

Section: Introductionmentioning

confidence: 99%

Structures and magnetic properties of iron silicide from adaptive genetic algorithm and first-principles calculations

Yang

Zhao

et al. 2018

Journal of Applied Physics

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We performed a systematic search for low-energy structures of binary iron silicide over a wide range of compositions using the crystal structure prediction method based on adaptive genetic algorithm. 36 structures with formation energies within 50 meV/atom (11 of them are within 20 meV) above the convex hull formed by experimentally known stable structures are predicted. Magnetic properties of these low-energy structures are investigated. Some of these structures can be promising candidates for rare-earth-free permanent magnet.

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Large magnetic anisotropy predicted for rare-earth-free Fe16−xCoxN2

Cited by 51 publications

References 30 publications

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device

X-ray absorption spectroscopy study of cobalt mononitride thin films

Structures and magnetic properties of iron silicide from adaptive genetic algorithm and first-principles calculations

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Large magnetic anisotropy predicted for rare-earth-free Fe16−xCoxN2

Cited by 51 publications

References 30 publications

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe16N2 Thin Film and Magnetoresistance Device

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe16N2 Thin Film and Magnetoresistance Device

X-ray absorption spectroscopy study of cobalt mononitride thin films

Structures and magnetic properties of iron silicide from adaptive genetic algorithm and first-principles calculations

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Product

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Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device

Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device