Large-Scale Fabrication of 4-nm-Channel Vertical Protein-Based Ambipolar Transistors

Abstract

We suggest a universal method for the mass production of nanometer-sized molecular transistors. This vertical-type device was fabricated using conventional photolithography and self-assembly methods and was processed in parallel fashion. We used this transistor to investigate the transport properties of a single layer of bovine serum albumin protein. This 4-nm-channel device exhibits low operating voltages, ambipolar behavior, and high gate sensitivity. The operation mechanism of this new device is suggested, and the charge transfer through the protein layer was explored.

Physically Transient Resistive Switching Memory Based on Silk Protein

“…Recent work has exploited silicon nanomembranes or zinc oxide thin films as semiconductors; magnesium, iron, tungsten, molybdenum, or zinc as electrodes materials; magnesium oxide, silicon oxide, or silicon nitride as dielectrics for transient electronic devices . On the other hand, natural biomaterials, which are typically environmentally friendly, biocompatible, and biodegradable, have attracted great interest for implantable, biocompatible, wearable, and green electronic devices applications . Additionally, biomaterials are widely available, low cost, and compatible with printable electronic technology.…”

Nonlinear Migration Dynamics of Excess Electrons along Linear Oligopeptides Controlled by an Applied Electric Field

“…Conceivably, E ex is one of the important elements that should not be ignored in the charge transfer process. However, although there are some studies on peptides in E ex , they mostly report that whether the peptides are suitable as the peptides‐based electronic devices or which kind of electronic devices the peptides are suitable for . For instance, alpha‐helix peptides show different currents under the E ex in antiparallel and parallel with the intrinsic dipole moment of the peptides, and thus they are suitable for the design of peptide semiconductors .…”

“…However, although there are some studies on peptides in E ex , they mostly report that whether the peptides are suitable as the peptides-based electronic devices or which kind of electronic devices the peptides are suitable for. [62][63][64][65][66][67][68][69][70][71] For instance, alpha-helix peptides show different currents under the E ex in antiparallel and parallel with the intrinsic dipole moment of the peptides, and thus they are suitable for the design of peptide semiconductors. [72] However, there are not detailed or systematic descriptions about how the E ex with different directions and strengths influence the ET behavior of peptides and their corresponding electronic properties.…”

1‐Nanometer‐Sized Active‐Channel Molecular Quantum‐Dot Transistor

“…1). [13] The transistor-fabrication process is initiated by a lithographic definition of aluminum electrodes on top of a highly doped silicon wafer covered with 100-nm-thick thermal oxide and followed by the deposition of an 80-nm layer of Si 3 N 4 dielectric material. Arrays of microcavities, ranging from 600 nm to 3 mm in diameter, were then created by drilling holes through the entire layer to the highly doped silicon substrate, after which the aluminum electrode was oxidized at room temperature.…”

“…For the upper electrode evaporation we used our previously demonstrated indirect and chopped evaporation methodologies. [13,14] The SAM used in this transistor consisted of carboxyfullerene (Fig. 1d).…”