Large-scale GaN nanobelts and nanowires grown from milled Ga2O3 powders

Jian, Jikang; Chen, X.L.; He, Meng; Wang, W.J.; Zhang, X.N.; Shen, Feng

doi:10.1016/s0009-2614(02)01909-7

Cited by 70 publications

(27 citation statements)

References 14 publications

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“…The defect-free and uniform evolution of wires grown in the a-direction into 2D surfaces suggests that these nanowires could potentially serve as seeds for growing large GaN crystals. Ribbon-or belt-like morphologies have been reported previously [19] and have also been observed for polar materials such as GaN [20] and ZnO. [21] The mechanism proposed here should be universally applicable.…”

Section: ______________________ -supporting

confidence: 70%

Direction‐Dependent Homoepitaxial Growth of GaN Nanowires

Chin

Sunkara

2006

Advanced Materials

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the air hole array of a triangular lattice in an alumina matrix. For the formation of a fluorescent-dye layer on the surface of porous alumina, the porous alumina substrate was dipped in an ethanol solution containing 20 wt.-% dendrimer [13] and 4 × 10 -3 M pyrromethene 597 (EXITON) for 1 min and then dried. The thickness of the fluorescent-dye layer was approximately 1 lm.Optically pumped lasing experiments were performed using a frequency doubled Nd 3+ :yttrium aluminum garnet (YAG) pulse laser (532 nm wavelength, 8 ns pulse width, and 10 Hz repetition rate). The spot size of the incident light was 300 lm. The excitation light from the laser was irradiated from a direction parallel to the cylinder array to the surface of the fluorescent-dye layer. The emission from the cross section of porous alumina cut in the C-X direction was observed using a spectrometer.

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Section: ______________________ -supporting

confidence: 70%

Direction‐Dependent Homoepitaxial Growth of GaN Nanowires

Chin

Sunkara

2006

Advanced Materials

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“…Same effect of nanowire yield improvement has also been observed in GaN nanowires [44]. In addition, because of the lower vaporization or reaction temperature, many nanowires such as SnO 2 , Ga 2 O 3 , and GaN can be successfully produced from the milled precursors while only polycrystalline nanocrystals are formed without HEBM treatment [44][45][46]. Another effect of mechanical activation is the formation of well-crystallized structures in nanowires and nanotubes.…”

Section: Discussionmentioning

confidence: 78%

One-dimensional nanomaterials synthesized using high-energy ball milling and annealing process

Chen

et al. 2006

Science and Technology of Advanced Materials

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One-dimensional (1D) nanomaterials including nanotubes, nanowires and nanorods have many new properties, functionalities and a large range of promising applications. A major challenge for these future industrial applications is the large-quantity production. We report that the ball milling and annealing process has the potential to achieve the mass production. Several examples including C, BN nanotubes and SiC, Zn nanowires are presented to demonstrate such capability. In addition, both size and structure of 1D nanomaterials can be controlled by varying processing conditions. New growth mechanisms involved in the process have been investigated and the highenergy ball milling has an important role in the formation of these 1D nanomaterials. r

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“…Nanobelts of ZnO, 1 3 PbO, 4 ZnS, 5 MgO, 6 and GaN 7 have been synthesized by a solid-vapor phase process. The as-synthesized oxide nanobelts are pure, structurally uniform, and single-crystalline, and most of them are free of dislocations.…”

Section: Introductionmentioning

confidence: 99%

In Situ Structure Evolution from Cu(OH)₂ Nanobelts to Copper Nanowires

Wang¹,

Kong²,

Wen³

et al. 2003

J. Phys. Chem. B

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In situ structural evolution from Cu(OH) 2 nanobelts to copper nanowires has been studied by transmission electron microscopy in a vacuum of 3 × 10 -8 Torr. The decomposition follows the sequence of Cu(OH) 2 f CuO f Cu 2 O f Cu. The decomposition from Cu(OH) 2 to CuO is attributed to electron beam radiation damage. The reduction from CuO to Cu 2 O is attributed to heat-induced decomposition between 50 and 200 °C. For the Cu(OH) 2 nanobelts synthesized using the copper grid with and without a carbon coating, the decomposition from Cu 2 O to Cu takes place between 200 and 300 °C and 300 and 600 °C, and the final Cu takes the forms of polycrystalline nanowires sheathed with graphitic carbon and nanoparticles, respectively. Therefore, because of the nanostructured nature of the nanowires and large surface area, introducing carbon into the sample synthesis can reduce the decomposition temperature by almost half. This study demonstrates a possible approach for creating metallic copper nanowires by heat-induced decomposition under vacuum at 300 °C or even lower.

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Large-scale GaN nanobelts and nanowires grown from milled Ga2O3 powders

Cited by 70 publications

References 14 publications

Direction‐Dependent Homoepitaxial Growth of GaN Nanowires

Direction‐Dependent Homoepitaxial Growth of GaN Nanowires

One-dimensional nanomaterials synthesized using high-energy ball milling and annealing process

In Situ Structure Evolution from Cu(OH)₂ Nanobelts to Copper Nanowires

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Large-scale GaN nanobelts and nanowires grown from milled Ga2O3 powders

Cited by 70 publications

References 14 publications

Direction‐Dependent Homoepitaxial Growth of GaN Nanowires

Direction‐Dependent Homoepitaxial Growth of GaN Nanowires

One-dimensional nanomaterials synthesized using high-energy ball milling and annealing process

In Situ Structure Evolution from Cu(OH)2 Nanobelts to Copper Nanowires

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In Situ Structure Evolution from Cu(OH)₂ Nanobelts to Copper Nanowires