Large-scale synthesis of Bi2S3 nanorods and nanoflowers for flexible near-infrared laser detectors and visible light photodetectors

Engineering Vacancies in Bi2S3yielding Sub‐Bandgap Photoresponse and Highly Sensitive Short‐Wave Infrared Photodetectors

“…All the values were achieved at drain bias of 1 V and zero gate voltage. It is noted that the responsivities are much higher by several orders of magnitude compared to previously reported Bi 2 S 3 photodetectors and the spectral coverage has been extended to short‐wave infrared range due to formation of in‐gap states in sulphur defective samples. Besides, we also measured the gate‐dependent photocurrent and responsivity of both detectors (Figure S4, Supporting Information), which shows that the backgate does not have appreciable influence on the photodetection performance suggesting the photoconductive effect as the underlying photodetection mechanism …”

“…Although photodetectors based on Bi 2 S 3 nanomaterials have been reported, their performance is lower than commercial silicon detectors and recent‐emerging material platforms such as 2D materials, perovskite, and QD‐based hybrid photodetectors . For example, the Bi 2 S 3 nanorods and nanoflowers showed a photo‐switching ratio of only 23.6 . The nanosheet‐based near infrared detectors exhibited responsivity ranging from 210 µA W −1 to 4.4 A W −1 .…”

Large-size and high performance visible-light photodetectors based on two-dimensional hybrid materials SnS/RGO

“…[3][4][5] Therefore numerous attempts have been made to combine these 2D nanosheets with semiconductor nanostructures, this kind of hybrid photodetectors achieves ultrahigh responsivity due to the synergism between the strong absorption of semiconducting nanostructures and the extremely fast conduction of carriers within the 2D nanosheets. [6][7][8][9] These hybrid photodetectors, such as graphene/PbS, 6 graphene/ZnO, 7 MoS 2 /PbS, 8 SnS 2 /PbS 9 et al have already demonstrated outstanding performance.…”

Two-dimensional Bi2Se3 nanosheet based flexible infrared photodetector with pencil-drawn graphite electrodes on paper

“…Therefore, state-of-the-art infrared photodetectors require intrinsically exible materials that contribute multiple advantages combined with broadband detection and ultra-high responsivity to meet the requirements of sensitivity and exibility. [5][6][7][8] Recently, two-dimensional (2D) materials have attracted widespread attention in advanced photodetectors due to their inherent atomic structure with excellent exibility, 9 superior photoelectric properties [10][11][12] and high compatibility with exible substrates. Among them, black phosphorus (BP) is a novel 2D material with an inherent direct bandgap, 13 but it is well known that 2D BP is unstable when exposed to ambient conditions, which limits its practical applications.…”