2008
DOI: 10.1103/physrevlett.100.226603
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Large Spin Diffusion Length in an Amorphous Organic Semiconductor

Abstract: We directly measured a spin diffusion length (lambdas) of 13.3 nm in amorphous organic semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, lambdas in single-crystalline rubrene can … Show more

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Cited by 207 publications
(200 citation statements)
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“…The R p value was obtained at a magnetic field of 3,000 Oe. The calculation shows an MR ratio of 5.3% at 300 K, which is one of the highest MR ratios that have been reported at room temperature 7,8,[10][11][12][13] . Note that both the MR ratios and device resistance increased with decreasing measurement temperatures.…”
Section: Resultsmentioning
confidence: 81%
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“…The R p value was obtained at a magnetic field of 3,000 Oe. The calculation shows an MR ratio of 5.3% at 300 K, which is one of the highest MR ratios that have been reported at room temperature 7,8,[10][11][12][13] . Note that both the MR ratios and device resistance increased with decreasing measurement temperatures.…”
Section: Resultsmentioning
confidence: 81%
“…C 60 is stable and easily forms a high-quality molecular film via thermal evaporation. In particular, the hyperfine interaction in C 60 is considerably weak because of the absence of polarized hydrogen nuclei and the low natural abundance of 13 C nuclear spins in the C 60 molecule 11,12,14,15 . The weak hyperfine interaction has been predicted to increase the SDT length 28 , which has been demonstrated at low temperatures using a deuterated polymer as a spacer in organic spin valve devices 29 .…”
Section: Resultsmentioning
confidence: 99%
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