Large transverse piezoelectric properties of lead-free Bi0.5(Na0.82K0.18)0.5TiO3 films

Chae, Song A; Won, Sung Sik; Seog, Hae Jin; Ullah, Aman; Ahn, Chang Won; Kim, Ill Won

doi:10.1016/j.cap.2016.01.008

Cited by 7 publications

(1 citation statement)

References 35 publications

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“…[10][11][12][13][14][15] Previous research had been conducted on BKT-based thin film solid solutions with BiFeO 3 and (Bi 0.5 Na 0.5 )TiO 3 . [16][17][18][19][20] These materials at the MPB composition had been investigated with regard to further improving their piezoelectric properties. We focused on the (Bi 0.5 K 0.5 )TiO 3 -Bi(Mg 0.5 Ti 0.5 )O 3 system, for which nothing had been reported with regard to thin film solid solutions.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of (Bi,K)TiO₃-Bi(Mg,Ti)O₃(001) films and their ferroelectric and piezoelectric properties

Morishita

Kazama

Sato

et al. 2019

Jpn. J. Appl. Phys.

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Epitaxial growth of 0.95(Bi 0.5 K 0.5 )TiO 3 -0.05Bi(Mg 0.5 Ti 0.5 )O 3 (BKT-BMT) films on silicon substrates at the morphotropic phase boundary composition has been achieved for the first time using pulsed laser deposition. Perovskite films with a cube-on-cube relationship grew on the platinum bottom electrode at a substrate temperature of 450 °C-550 °C. Both the Bi/(Mg + Ti) and K/(Mg + Ti) ratios decreased with increasing substrate temperature. A film with an approximately stoichiometric composition was obtained at a substrate temperature of 450 °C. The BKT-BMT film has a high lattice anisotropy parameter (c/a) of 1.048 because a large strain of 0.7%-1.0% is introduced into the film. Its remanent polarization (P r ) and coercive field (E c ) are 60 μC cm −2 and 200 kV cm −1 , respectively. The transverse piezoelectric coefficient (e 31,f ) of the BKT-BMT films is −2.2 C cm −2 . The BKT-BMT film has superior displacement linearity with regard to different electric fields.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of (Bi,K)TiO₃-Bi(Mg,Ti)O₃(001) films and their ferroelectric and piezoelectric properties

Morishita

Kazama

Sato

et al. 2019

Jpn. J. Appl. Phys.

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Microstructure, dielectric and ferroelectric properties of (1-x)Bi0.5Na0.5TiO3-x(0.8Ba0.9Sr0.1TiO3-0.2BiFeO3) lead-free ceramics

Huang

Jin

et al. 2022

J Mater Sci: Mater Electron

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Effects of Mn doping on dielectric properties of ferroelectric relaxor PLZT ceramics

Dimza

Попов

Lace

et al. 2017

Current Applied Physics

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A series of PLZT (8/65/35) ceramics with different Mn 2 O 3 concentration (0.01, 0.1, 0.3, 1.0, and 3.0% by weight) have been synthesized to figure out its influence on their dielectric properties. The complex dielectric permittivity ε* ¼ ε 0 Àiε 00 as function of frequency and temperature as well as polarisation loops P(E) have been studied as a function of Mn concentration. It was found that Mn doping is restrained the Vogel-Fulcher law held in the unmodified PLZT compound producing essential change of the dependence of ε* on temperature and frequency and of the shape of P(E). The observed effects are explained by gradual involvement of Debye and Maxwell-Wagner polarisation mechanisms in relaxation processes with the growth of the concentration of Mn concentration admixture. A decrease of the ε'(T) maximum value and shift of the maximum to higher temperatures is observed. The observed effects are attributed to impacts of Mn 2þ and Mn 3þ ions: formation of oxygen vacancies paired with Mn 2þ as dipoles and Jahn-Teller distortion prompted by Mn 3þ ions.

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Large transverse piezoelectric properties of lead-free Bi0.5(Na0.82K0.18)0.5TiO3 films

Cited by 7 publications

References 35 publications

Epitaxial growth of (Bi,K)TiO₃-Bi(Mg,Ti)O₃(001) films and their ferroelectric and piezoelectric properties

Epitaxial growth of (Bi,K)TiO₃-Bi(Mg,Ti)O₃(001) films and their ferroelectric and piezoelectric properties

Microstructure, dielectric and ferroelectric properties of (1-x)Bi0.5Na0.5TiO3-x(0.8Ba0.9Sr0.1TiO3-0.2BiFeO3) lead-free ceramics

Effects of Mn doping on dielectric properties of ferroelectric relaxor PLZT ceramics

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Large transverse piezoelectric properties of lead-free Bi0.5(Na0.82K0.18)0.5TiO3 films

Cited by 7 publications

References 35 publications

Epitaxial growth of (Bi,K)TiO3-Bi(Mg,Ti)O3(001) films and their ferroelectric and piezoelectric properties

Epitaxial growth of (Bi,K)TiO3-Bi(Mg,Ti)O3(001) films and their ferroelectric and piezoelectric properties

Microstructure, dielectric and ferroelectric properties of (1-x)Bi0.5Na0.5TiO3-x(0.8Ba0.9Sr0.1TiO3-0.2BiFeO3) lead-free ceramics

Effects of Mn doping on dielectric properties of ferroelectric relaxor PLZT ceramics

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Epitaxial growth of (Bi,K)TiO₃-Bi(Mg,Ti)O₃(001) films and their ferroelectric and piezoelectric properties

Epitaxial growth of (Bi,K)TiO₃-Bi(Mg,Ti)O₃(001) films and their ferroelectric and piezoelectric properties