Laser activation of diamond surface for electroless metal plating

Pimenov, S.M.; Shafeev, G. A.; Laptev, V. A.; Loubnin, E.N.

doi:10.1063/1.111747

Cited by 22 publications

(4 citation statements)

References 7 publications

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“…Many months after sample irradiation, electroless metal deposition is still successful. These observations are similar to those on laser-assisted activation of Al 2 O 3 and diamond; 3,4 in particular, these laser-generated catalytic sites are nonmetallic, and stable upon acid treatment. Moreover, the metal deposit can be dissolved in acid and deposited many times on the ablated areas.…”

supporting

confidence: 82%

“…The mechanism of laser activation of SiC is discussed in relationship with similar activation processes of some other dielectrics, such as SiO 2 , Al 2 O 3 , and diamond. [2][3][4] Compensated SiC single crystal samples doped with nitrogen ͑10 17 -10 18 cm Ϫ3 ͒ with their c axes perpendicular to the surface were used in the experiments. The irradiation of the samples was carried out in air with a UV XeCl excimer laser ͑ϭ308 nm, FWHF of pulse duration: 20 ns͒ at normal incidence.…”

mentioning

confidence: 99%

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Uncongruent laser ablation and electroless metallization of SiC

Shafeev

Bellard²,

Themlin³

et al. 1996

Applied Physics Letters

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Experimental results on the ablation of a SiC single crystal in air under irradiation with a XeCl excimer laser beam are presented. XPS analysis reveals the Si enrichment of the ablated areas under an energy density of the laser beam of 1 to 3.5 J/cm 2 and the formation of SiO x in the ablated areas. The nonstoichiometric ablation of SiC allows one to activate selectively the SiC surface for metal deposition from an electroless plating solution. Both Ni and Cu deposits show a good adherence to the SiC surface ͑up to 0.5 N/mm 2 ͒. Similar results are observed with SiC ceramics with a better adherence of the electroless metal deposit. The adherence of the deposit to the ablated SiC samples increases upon HF treatment.

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supporting

confidence: 82%

mentioning

confidence: 99%

Uncongruent laser ablation and electroless metallization of SiC

Shafeev

Bellard²,

Themlin³

et al. 1996

Applied Physics Letters

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“…[ 6 ] In contrast, the selective activation of diamond substrates with a Cu vapor laser ( λ = 510 nm) and KrF excimer laser ( λ = 248 nm) was also reported. [ 7 ] In this example, laser‐induced decomposition of palladium acetyl acetonate (Pd(acac) 2 ) solid films and Pd(acac) 2 dissolved in dimethylformamide were used to produce catalytic Pd particles for subsequent electroless plating.…”

Section: Introductionmentioning

confidence: 99%

Selective Metallization of Polymers: Surface Activation of Polybutylene Terephthalate (PBT) Assisted by Picosecond Laser Pulses

et al. 2021

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The selective metallization of nonconductive polymer materials has broad applications in the fields of integrated circuit technology and metallized patterns. This work discusses a methodology to pattern metal tracks on polybutylene terephthalate substrates. The process consists of three steps: 1) surface patterning with picosecond laser pulses (1030 nm) in air, 2) Pd seeding via treatment in PdCl2 solution, and 3) selective metallization via electroless copper deposition. Picosecond laser irradiation promotes not only surface roughening but also chemical modification to enable Pd seeding as the polymer surface acquires the ability to reduce Pd(II)‐chloride species to metallic Pd. The laser parameters, as well as the PdCl2 concentration and seeding temperature, have an influence on the polymer surface morphology, the concentration and distribution of metallic Pd, and the copper layer properties. Homogeneous copper layers with well‐defined geometries, good coating‐substrate adhesion, and high electrical conductivity can be obtained. This is ascribed to the synergistic effect of the chemical surface activation and roughness development (from 0.13 to ≈1.6 μm). As the patterning and surface activation are performed in air, directly on the as‐received polymer substrate, this methodology shows great potential for metallization of electronic devices with 3D complex geometries.

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“…This can be one of the promising methods for direct metal patterning, i.e., a method without photoresist. The mechanism of the deposition is very different from the previous studies of laser assisted metal deposition, in which the deposition is enhanced by heating effects [20][21][22][23] or sensitization [24][25][26]. The principle of the method in this research is based on the band structure of p-type semiconductor at the interface.…”

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confidence: 95%

Laser-assisted nickel deposition onto porous silicon

Sasano

Schmuki

Sakka

et al. 2003

phys. stat. sol. (a)

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As a direct metal patterning method, local electrodeposition of Ni onto porous silicon (PS) is studied. The principle of the method in this research utilizes the photo-excitation of semiconductor, in contrast to the previous studies of laser assisted metal deposition, in which the deposition is enhanced by heating effects or sensitization by laser irradiation. Electrochemical measurements show the different behaviors between PS and planar Si. The current is lower for PS than planar Si. The higher rate of charge recombination in PS is considered as a probable reason of this low current in PS. Also it was shown that the nucleation rate was low on PS.

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Laser activation of diamond surface for electroless metal plating

Cited by 22 publications

References 7 publications

Uncongruent laser ablation and electroless metallization of SiC

Uncongruent laser ablation and electroless metallization of SiC

Selective Metallization of Polymers: Surface Activation of Polybutylene Terephthalate (PBT) Assisted by Picosecond Laser Pulses

Laser-assisted nickel deposition onto porous silicon

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