Laser-assisted nickel deposition onto porous silicon

Sasano, Junji; Schmuki, Patrik; Sakka, Tetsuo; Ogata, Yukio H.

doi:10.1002/pssa.200306466

Cited by 20 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this context, Takahashi et al demonstrated light-assisted control of electrodeposition under constant applied potential for fabricating a CdTe layer on p-type Si ͑100͒. 26 Laser-assisted maskless patterning of metals on p-type porous Si was also reported by Sasano et al [27][28][29] Utilizing the different properties of Pt deposition on p-type Si in the dark and under illumination, we tried to control Pt electrodeposition on p-type Si by illumination control without any potential step. A schematic diagram of the procedure is shown in Fig.…”

Section: C702mentioning

confidence: 93%

Photoassisted Control of Pt Electrodeposition on p-Type Si

Kawamura

Sakka

Ogata

2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

A new method to control the size and distribution of electrodeposited metal on a semiconductor was investigated, using a system of Pt deposition on p-type Si. Pt is a noble metal, and electrodeposition is possible on p-type Si through hole injection to the valence band. When the Si surface is illuminated, an additional charge-transfer path becomes possible utilizing electrons photoexcited to the conduction band. The two pathways give different morphologies for the deposits. Fine and dispersed particles were electrodeposited under illumination, indicating the nucleation process was prevailing; in the dark, grown deposits were observed and the dominant process was crystal growth. We used the different deposition behavior to control the size and distribution of electrodeposits by the illumination-modulated method. Initial illumination gives nuclei of electrodeposits, and the adjustment of the duration can control the number of electrodeposits. The following electrolysis in the dark grows the deposits and can control the size. The method showed the possibility of controlling the size and distribution of Pt electrodeposits on p-type Si without changing applied potential.Recently, the hydrogen energy system is attracting a great deal of attention due to its small environmental burden, compared with the system using conventional fossil fuels. Photoelectrochemical hydrogen evolution from water on a semiconductor can play an important role in realizing a clean hydrogen society. 1,2 Many kinds of semiconductors, such as titanium dioxide or tantalum oxynitride, have been proposed as the material for solar-hydrogen evolution. These semiconductors need enhancement of electrocatalysis in some way, like the deposition of fine metal particles. 3-6 Heller has reported the use of n-GaAs, CdS, p-InP, etc. modified with particles of a noble metal ͑Pt, Ru, Rh͒ for the application to photoelectrochemical cells. 7 Si is also a possible photocathode for hydrogen evolution from water. Si has a bandgap suitable for the effective utilization of solar energy, and the position of the conduction band is suitable for hydrogen evolution in photoelectrochemical cells. However, Si has some problems in its actual use as an electrode for photoelectrochemical hydrogen evolution. First, it is corrosive in aqueous solution under illumination. Some proposals to overcome the problem have been made, for example, stabilization of the semiconductor with surface alkylation. 8,9 Second, the charge-transfer rate at a semiconductor is quite slow. 10 The size and distribution of metal particles on a semiconductor affect the electrocatalysis greatly in photoelectrochemical hydrogen evolution. 11 Nakato et al. investigated hydrogen evolution on p-Si with Pt particles. 12,13 Metal particles on a semiconductor behave as reaction centers on the semiconductor electrode. However, they also work as carrier recombination centers and reduce the energy conversion efficiency. To suppress the recombination, the size of the metal particles needs to be very fine. 14 Additiona...

show abstract

Section: C702mentioning

confidence: 93%

Photoassisted Control of Pt Electrodeposition on p-Type Si

Kawamura

Sakka

Ogata

2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…The use of the laser chemical metal deposition (LCMD) process is considered to be the most suitable process for industrial application. The method can certainly make the process simpler, as the nitride ablation and seed layer formation can be performed in a single step [ 43 , 44 ]. N. Wehkamp et al at Fraunhofer ISE have worked on such type of laser chemical metal deposition methods, and reported an efficiency of 17.9% by forming a 40 μm wide line for solar cell fabricated on p-type CZ silicon substrate [ 46 ].…”

Section: Methodsmentioning

confidence: 99%

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Rehman

Lee

2014

Materials

View full text Add to dashboard Cite

Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu) based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP) process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

show abstract

“…Thus this is a promising method which enables maskless patterning of the silicon substrate. Local deposition of Ni onto porous silicon by photo-excitation of the silicon substrate, which is a method for direct metal patterning, has also been studied [ 106 ]. On the spots which are illuminated by the laser beam Ni deposition preferentially takes place due to photo-induced electrons in the conduction band which contribute to the reduction of Ni ions.…”

Section: Filling Of Porous Siliconmentioning

confidence: 99%

Porous Silicon—A Versatile Host Material

2010

View full text Add to dashboard Cite

This work reviews the use of porous silicon (PS) as a nanomaterial which is extensively investigated and utilized for various applications, e.g., in the fields of optics, sensor technology and biomedicine. Furthermore the combination of PS with one or more materials which are also nanostructured due to their deposition within the porous matrix is discussed. Such nanocompounds offer a broad avenue of new and interesting properties depending on the kind of involved materials as well as on their morphology. The filling of the pores performed by electroless or electrochemical deposition is described, whereas different morphologies, reaching from micro- to macro pores are utilized as host material which can be self-organized or fabricated by prestructuring. For metal-deposition within the porous structures, both ferromagnetic and non-magnetic metals are used. Emphasis will be put on self-arranged mesoporous silicon, offering a quasi-regular pore arrangement, employed as template for filling with ferromagnetic metals. By varying the deposition parameters the precipitation of the metal structures within the pores can be tuned in geometry and spatial distribution leading to samples with desired magnetic properties. The correlation between morphology and magnetic behaviour of such semiconducting/magnetic systems will be determined. Porous silicon and its combination with a variety of filling materials leads to nanocomposites with specific physical properties caused by the nanometric size and give rise to a multiplicity of potential applications in spintronics, magnetic and magneto-optic devices, nutritional food additives as well as drug delivery.

show abstract

Laser-assisted nickel deposition onto porous silicon

Cited by 20 publications

References 15 publications

Photoassisted Control of Pt Electrodeposition on p-Type Si

Photoassisted Control of Pt Electrodeposition on p-Type Si

Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

Porous Silicon—A Versatile Host Material

Contact Info

Product

Resources

About