Laser annealing of hydrogenated amorphous silicon–carbon films

Coscia, U.; Ambrosone, G.; Minarini, Carla; Parisi, Valerio; Schutzmann, S.; Tebano, A.; Restello, S.; Rigato, V.

doi:10.1016/j.tsf.2003.11.070

Cited by 19 publications

(7 citation statements)

References 22 publications

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“…Laser annealing of hydrogenated amorphous silicon carbide has also been employed to grow microcrystalline silicon-carbon (mc-SiC) alloy at low-substrate temperatures in order to develop further applications in solar cells and light-emitting diodes [7]. Films of a-SiC:H are typically grown on low-temperature substrates by plasma- using methyl-trichloro-silane (MTS) or monomethyl-silane (MMS) as a source material having carbon-to-silicon atomic ratio of unity [8,9], and showed that the composition of the a-SiC:H films can be controlled in these systems [10].…”

Section: Introductionmentioning

confidence: 99%

FTIR analysis of a-SiC:H films grown by plasma enhanced CVD

Kaneko

Nemoto

Horiguchi

et al. 2005

Journal of Crystal Growth

104

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Section: Introductionmentioning

confidence: 99%

FTIR analysis of a-SiC:H films grown by plasma enhanced CVD

Kaneko

Nemoto

Horiguchi

et al. 2005

Journal of Crystal Growth

104

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“…Hydrogenated silicon carbide (SiC:H) is a versatile material due to its interesting mechanical, electrical, and optical properties. The material has been extensively studied due to potential applications in variety of fields such as mechanical protection coating [1], an optical coating for solar cells [2], in light emitting diodes and solar cells [3], and in X-ray lithography masks [4]. The physical properties of SiC:H are strongly dependent on composition of Si and C in the films and hence dependent on Si and C source gases and the preparation technique employed.…”

Section: Introductionmentioning

confidence: 99%

Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Kamble

Waman

Mayabadi

et al. 2014

Journal of Coatings

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Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH4) and methane (CH4) gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s<rd<15.54 nm/s). Formation of SiC:H films is confirmed by FTIR, Raman, and XPS analysis. XRD and Raman analysis revealed that with increasing deposition pressure amorphization occurs in SiC:H films. FTIR spectroscopy analysis shows that bond density of C–H decreases while Si–C and Si–H bond densities increase with increasing deposition pressure. Total hydrogen content increases with increasing deposition pressure and was found to be <20 at.%. The absence of band ~1300–1600 cm−1in the Raman spectra implies negligible C–C bond concentration and formation of nearly stoichiometric SiC:H films. The band gap shows increasing trend with increasing deposition pressure. The high value of Urbach energy suggests increased structural disorder in SiC:H films. Finally, it has been concluded that CH4can be used as effective carbon source in HW-CVD method to prepare stoichiometric SiC:H films.

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“…Further, because the absorption coefficient of silicon rich amorphous silicon carbon (a-Si 1-x C x :H) is relatively high in the UV range (≈10 6 cm -1 ) [1], the crystallization takes place without damage of the substrate in these samples. Since excimer laser annealing are reported to produce crystalline films of interest [5,[9][10][11][12][13], in this paper we have undertaken excimer laser annealing of hydrogenated amorphous silicon carbon films of different carbon content deposited by plasma enhanced chemical vapour deposition (PECVD). To better understand the structural and morphological modifications of these materials as a function of carbon content, we have performed X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) measurements.…”

Section: Introductionmentioning

confidence: 99%

Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD

Ambrosone¹,

Basa

Coscia

et al. 2010

Phys. Status Solidi (c)

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Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X‐ray diffraction spectra and field emission scanning electron microscopy images demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the excimer laser treatment (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Laser annealing of hydrogenated amorphous silicon–carbon films

Cited by 19 publications

References 22 publications

FTIR analysis of a-SiC:H films grown by plasma enhanced CVD

FTIR analysis of a-SiC:H films grown by plasma enhanced CVD

Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD

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