Laser annealing of SiOx thin films

Gallas, Bruno; Kao, C.-C.; Fisson, S.; Vuye, G.; Rivory, J.; Bernard, Y.; Belouet, C.

doi:10.1016/s0169-4332(01)00983-7

Cited by 29 publications

(10 citation statements)

References 16 publications

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“…The process ends with the formation of many a-Si nanoparticles in the film bulk from released Si atoms followed with subsequent crystallization of the nanoparticles (Gallas et al, 2002). In such cases, the silica films undergo shrinkage.…”

Section: Geo2 Films With Ge-nanoclusters In Layered Compositions: Strmentioning

confidence: 99%

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Gorokhov¹,

Astankova²,

Komonov³

2012

Laser Pulses - Theory, Technology, and Applications

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Section: Geo2 Films With Ge-nanoclusters In Layered Compositions: Strmentioning

confidence: 99%

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Gorokhov¹,

Astankova²,

Komonov³

2012

Laser Pulses - Theory, Technology, and Applications

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“…[3][4][5] SiO x thin films are also being employed for the fabrication of light-emitting silicon-based structures. 6,7 These latter consist of silicon nanocrystals embedded in a silica matrix and are obtained by disproportionation reaction of the Si n+ ͑0 Ͻ n Ͻ 4͒ species present in the SiO x . Annealing in vacuum or in an inert gas [8][9][10] or exposure to a laser 7,11 or an intense source of ultraviolet ͑UV͒ light 12 have been used to induce such a reaction.…”

Section: Introductionmentioning

confidence: 99%

Electronic state characterization of SiOx thin films prepared by evaporation

Barranco

Yubero

Espinós

et al. 2005

Journal of Applied Physics

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SiO x thin films with different stoichiometries from SiO 1.3 to SiO 1.8 have been prepared by evaporation of silicon monoxide in vacuum or under well-controlled partial pressures of oxygen ͑P Ͻ 10 −6 Torr͒. These thin films have been characterized by x-ray photoemission and x-ray-absorption spectroscopies, this latter at the Si K and L 2,3 absorption edges. It has been found that the films prepared in vacuum consists of a mixture of Si 3+ and Si + species that progressively convert into Si 4+ as the partial pressure of oxygen during preparation increases. From this spectroscopic analysis, information has been gained about the energy distribution of both the full and empty states of, respectively, the valence and conduction bands of SiO x as a function of the O / Si ratio. The characterization of these films by reflection electron energy-loss spectroscopy ͑REELS͒ has provided further evidences about their electronic structure ͑band gap and electronic states͒ as a function of the oxygen content. The determination of the plasmon energies by REELS has also shown that the films prepared by evaporation in vacuum consist of a single phase which is characterized by a density ͑1.7 g cm −3 ͒ lower than that of SiO 2 ͑i.e., 2.2 g cm −3 ͒ or Si ͑i.e., 2.4 g cm −3 ͒. The optical properties ͑n and k͒ of the films as a function of the O / Si content have been deduced from the analysis of REELS spectra in the energy range from 4 to 20 eV. It has been also shown that the O / Si ratio in the films and several spectroscopic parameters such as the Auger parameter or the energy of bulk plasmons present a linear relationship and that this linear dependence can be used for a rapid characterization of SiO x materials. By contrast, the band-gap energy changes differently with the O / Si ratio, following a smooth linear increase from about 3.8 eV for SiO 1.3 to ca. 5.0 eV for SiO 1.7 and a jump up to 8.7 eV for SiO 2 . These results indicate that the random-bonding model does not apply to thin films prepared by evaporation under our experimental conditions. Other distributions of Si n+ states can be induced if the films are excited with an external source such as heat or photon irradiation. In this case the electronic properties vary and the previous linear correlations as a function of the oxygen content do not hold any longer.

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“…The size distribution and number of Si nanocrystals were found to strongly depend both on the content of excess Si into SiO x films and on annealing temperature and duration. The laser annealing for transformation of SiO x film into the nanocomposite one containing Si nanoclusters in a SiO 2 matrix are investigated as an alternative annealing method [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Nanostructuring the SiOx layers by using laser-induced self-organization

Steblova¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The processes of laser-induced transformation of SiO x oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO 2 oxide matrix under irradiation by nanosecond pulses of YAG:Nd +3 -laser were shown. Laser radiation at the fundamental wavelength, λ 1 = 1064 nm, and second harmonic, λ 2 = 532 nm, were applied at researches. The size and surface concentration of nanofragments dependences on the intensity and wavelength of the laser irradiation have been determined from experimental data based on atomic force microscopy, infrared transmission spectra and electrophysical measurements. SiO x nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticles formation occur mainly through generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock.

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Laser annealing of SiOx thin films

Cited by 29 publications

References 16 publications

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Electronic state characterization of SiOx thin films prepared by evaporation

Nanostructuring the SiOx layers by using laser-induced self-organization

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