Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

Vecchi, Sylvain De; Desrues, T.; Souche, F.; Muñoz, D.; Lemiti, M.

doi:10.1117/12.929783

Cited by 8 publications

(6 citation statements)

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“…Furthermore, a conversion efficiency of 20.5%, on a cell area of 221 cm 2 , was reached by LG, Korea [10], again by means of an interdigitated back-contacted silicon heterojunction (IBC-SHJ) device. Always in the field of IBC-SHJ devices, Helmholtz-Zentrum Berlin, Germany, has reported a conversion efficiency of 20.2% [11], whereas several other groups have presented solar cells with conversion efficiencies in the range of 15-20% [12]- [15]. Back-contacted SHJ devices using alternative contacting schemes have been reported as well [16]- [18].…”

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confidence: 99%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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Abstract-We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain high shortcircuit current densities close to 40 mA/cm 2 and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance.

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mentioning

confidence: 99%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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“…3(c) resulted in incomplete ablation and those used for Panel (d) resulted in surface damage, we propose an alternate processing scheme. Vecci et al demonstrated that the etch rate of SiN x films decreases as the NH 3 /SiH 4 deposition gas ratio decreases-as the ratio approaches zero so does the etch rate [14]. Coupling this fact with the favorable bandgap of a-Si:H shown in Fig.…”

Section: Indirect Removal Of Sin Xmentioning

confidence: 87%

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

et al. 2016

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We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN x on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN x and SiO x passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work.Published by Elsevier B.V.

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“…One of the key limitations is that the back‐contact architecture results in additional fabrication complexity, mainly due to the need to form interdigitated n‐ and p‐type a‐Si:H strips. Hence, different a‐Si:H patterning approaches have been developed including photolithography, lift‐off, shadow mask deposition, screen printing, inkjet printing, and laser ablation (LA) . Several research groups focus their work on LA due to the following three advantages: LA is a fast, single‐side, and contactless process; it allows a flexible device design; and it has high process precision.…”

Section: Different Laser Processing Speeds Used In This Work and Corrmentioning

confidence: 99%

Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage

Xu¹,

Bearda

Radhakrishnan

et al. 2017

Phys. Status Solidi RRL

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A detailed investigation of the laser damage to amorphous silicon (a‐Si:H) layers patterned by laser ablation (LA) and wet chemical etching is presented. This approach can be applied to pattern the rear side of silicon heterojunction interdigitated back‐contact solar cells. Only the top sacrificial a‐Si:H laser‐absorbing layer of an a‐Si:H/SiOx/a‐Si:H/c‐Si stack is ablated. Laser damage in the bottom a‐Si:H layer and a‐Si:H/c‐Si interface is analyzed by both scanning electron microscopy and transmission electron microscopy. We show that the a‐Si:H/c‐Si passivation is degraded by laser damage and that this degradation can be diminished by increasing laser processing speed. This is attributed to a decrease of laser‐irradiated area, and particularly smaller overlapping zones of adjacent laser pulses. The re‐passivation quality after LA and wet etching is similar to that of as‐passivated samples. This indicates that laser damage is not present in the bulk c‐Si substrate but only in the a‐Si:H passivation layer, which is removed during subsequent wet etching, thus allowing high quality repassivation.

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Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

Cited by 8 publications

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Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage

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