2014
DOI: 10.1109/jphotov.2014.2320586
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Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Abstract: Abstract-We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain hi… Show more

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Cited by 72 publications
(59 citation statements)
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“…J short is dramatically reduced when decreasing the front n-type a-Si:H layer thickness. For instance, replacing the 6-nm-thick n-type a-Si:H layer (featured at the front of the IBC-SHJ device on which we reported in [14]) with no n-layer at all, represents a current gain of ∼1.0 mA/cm 2 . These J short values are consistent with those obtained using OPAL, especially for n-layers thicker than 6 nm.…”
Section: B Mitigation Of Short-circuit Current Losses At the Front Omentioning
confidence: 98%
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“…J short is dramatically reduced when decreasing the front n-type a-Si:H layer thickness. For instance, replacing the 6-nm-thick n-type a-Si:H layer (featured at the front of the IBC-SHJ device on which we reported in [14]) with no n-layer at all, represents a current gain of ∼1.0 mA/cm 2 . These J short values are consistent with those obtained using OPAL, especially for n-layers thicker than 6 nm.…”
Section: B Mitigation Of Short-circuit Current Losses At the Front Omentioning
confidence: 98%
“…Hot-melt inkjet printing was performed by the commercial system LP50 from Roth & Rau B. V. Finally, the solar cells were cured at 200°C in a belt furnace to heal potentially present sputter-induced damage of the a-Si:H layers [37]. Further experimental details can be found in [14] and [38], especially regarding the low-cost patterning processes we developed.…”
Section: A Interdigitated Back-contacted Silicon Heterojunction Solamentioning
confidence: 99%
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“…23,33 In such cells, both electrical contacts are placed on the back of the device. As there is no metallization on the front side of the cells, shadowing losses are avoided, leading to enhanced current densities.…”
Section: Technological Outlook and Conclusionmentioning
confidence: 99%