Laser chemical vapor deposition of SiC films with CO2 laser

Fujie, Kengo; Ito, Akihiko; Tu, Rong; Goto, Takashi

doi:10.1016/j.jallcom.2010.04.154

Cited by 27 publications

(20 citation statements)

References 28 publications

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“…3C‐SiC is an attractive material for high‐temperature applications due to its many extreme features, such as its high temperature stability, thermal conductivity and mechanical strength, and its excellent chemical attack, thermal shock and oxidation resistance . Currently, 3C‐SiC thick films have been prepared by hot‐wall CVD (HCVD), plasma‐enhanced CVD (PECVD) and laser CVD (LCVD) . Among these chemical vapor deposition (CVD) processes, LCVD has a relatively high deposition rate at low deposition temperatures because ultraviolet laser photons can partially break apart some of the bonds of the precursor species.…”

Section: Introductionmentioning

confidence: 99%

Fine‐grained 3C‐SiC thick films prepared via hybrid laser chemical vapor deposition

et al. 2019

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An ultraviolet laser (λ = 266 nm) operated in pulsed mode and a diode laser (λ = 1060 nm) operated in continuous mode were simultaneously applied to create a hybrid laser chemical vapor deposition (CVD) approach. Fine‐grained 3C‐SiC thick films were prepared via hybrid laser CVD by using SiCl4, CH4 and H2 as precursors. The effects of the ultraviolet laser on the preferred orientations, microstructures, microhardness values and deposition rates of 3C‐SiC thick films were investigated. The 3C‐SiC thick films that were prepared at 4 kPa via diode laser CVD exhibited <110>‐orientations and 5‐100 µm grain sizes, whereas those prepared via hybrid laser CVD were randomly oriented with 0.5‐5 µm grain sizes. Compared to diode laser CVD, the additional irradiation of the ultraviolet laser in the hybrid laser CVD improved the Vickers microhardness values of the 3C‐SiC thick films from 30 to 35 GPa, and the maximum deposition rate was also increased from 935 to 1230 µm/h.

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Section: Introductionmentioning

confidence: 99%

Fine‐grained 3C‐SiC thick films prepared via hybrid laser chemical vapor deposition

et al. 2019

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“…Laser chemical vapor deposition method developed by our group was employed to prepare 3C–SiC film due to the ultra‐high deposition rate . Compared to conventional CVD, the laser can enhance chemical reactions in the gas phase and accelerate chemical reactions on the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

“…Laser chemical vapor deposition method developed by our group was employed to prepare 3C-SiC film due to the ultra-high deposition rate. [17][18][19] Compared to conventional CVD, the laser can enhance chemical reactions in the gas phase and accelerate chemical reactions on the substrate surface. In this current work, epitaxial 3C-SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with high deposition rate.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Zhu

Yang

et al. 2018

J Am Ceram Soc

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Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

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“…Although the use of low deposition temperatures often resulted in an amorphous film or absence of deposition [1,13], we have reported that laser irradiation during CVD enables the formation of 3C-SiC films at lower temperatures using an alkylsilane precursor (Si 2 (CH 3 ) 6 ) [14,15]. An aminosilane precursor has been used for preparing SiO 2 thin films [16] and amorphous silicon carbonitride films [17]; however, it has never been used for the growth of crystalline CVD-SiC films.…”

Section: Introductionmentioning

confidence: 99%

2H-SiC films grown by laser chemical vapor deposition

Ito

Kanno

Goto

2015

Journal of the European Ceramic Society

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a b s t r a c tWe demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH 4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920 K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182 m h −1 .

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Laser chemical vapor deposition of SiC films with CO2 laser

Cited by 27 publications

References 28 publications

Fine‐grained 3C‐SiC thick films prepared via hybrid laser chemical vapor deposition

Fine‐grained 3C‐SiC thick films prepared via hybrid laser chemical vapor deposition

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

2H-SiC films grown by laser chemical vapor deposition

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