Laser damage in silicon

Srećković, Milesa; Vedlin, B.; Backović, Nemanja

doi:10.1016/0030-3992(84)90096-3

Cited by 6 publications

(3 citation statements)

References 10 publications

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“…The laser induced damage studies in terms of these parameters allow a complete characterization of the damage process in terms of the intrinsic or extrinsic thermophysical and metallurgical properties of the material. Laser induced damage studies in semiconductors like Si, Ge and GaAs have been reported for a wide range of pulse duration and laser wavelengths [1][2][3][4][5][6][7][8]. However, only a few laser induced damage studies have been reported on InSb at 0.69µm, 1.06µm, 5.3µm and 10.6µm wavelengths [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Evolution of laser damage in indium antimonide(InSb) at 1.06-μm wavelength

et al. 2005

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Evolution of laser damage morphology has been studied in 112 oriented, mirror polished Indium Antimonide(InSb) samples as a function of increasing energy , pulse repetition rate and number of pulses using a Nd:Cr:GSGG laser of 1.06µm wavelength having a pulse width of 20ns. Scanning Electron Microscope(SEM) investigations of the irradiated samples have been done to understand the evolution of damage morphology. Damage morphology is consistent with surface melting and solidification along with an evidence of subsurface overheating. Temperature profiles calculated at different fluence levels confirm substantial subsurface heating. Multiple pulse damage seen at 20Hz with increasing fluence levels is mainly thermal damage. Thermal modeling has been done to explain different morphological features.

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Section: Introductionmentioning

confidence: 99%

Evolution of laser damage in indium antimonide(InSb) at 1.06-μm wavelength

et al. 2005

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“…However with smaller integrated circuits there are concerns about the interaction of high intensity lasers with the silicon lattice and the transfer of energy through it to the surrounding area. Recent studies of ultra short laser pulses have shown that they have the capability of machining with a reduced heat affected zone (HAZ) and molten liquid phase [1][2][3][4][5][6][7]. This is because the rapid deposition of energy in the material facilitates the formation of a vapour and plasma phase and this removes the material before that energy can be distributed to the surrounding area in the solid phase.…”

Section: Introductionmentioning

confidence: 99%

Analysis of thermal damage in bulk silicon with femtosecond laser micromachining

et al. 2004

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Femtosecond laser micromachining of silicon offers the potential to realize precision components with minimal thermal damage. In this work, an assessment of the damage observed in bulk silicon during femtosecond laser micromachining is presented. The different analysis methods used to determine the structural and chemical changes to wafer grade silicon is first described. The analysis is at or above the ablation threshold -defined as the point where laser induced crystallinedamage is first observed for 1 kHz laser pulses, of 150 fs duration, at a wavele ngth of 775nm. Structural analysis is based upon electron and optical microscopies, with different sample preparation techniques being used to reveal the micromachined structure. A key feature of the work presented here is the high-resolution Scanning Transmission Electron Microscope (STEM) images of the laser-machined structures. Below the ablation threshold, electrical experiments were performed with silicon under femtosecond laser excitation to provide a direct method for determining the accumulation of damage to the silicon lattice.Based on this analysis, it will be shown that laser machining of silicon with femtosecond pulses can produce features with minimal thermal damage, although lattice damage created by mechanical stresses and the deposition of ablated material both limit the extent to which this can be achieved, particularly at high aspect ratios.

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“…Laser-induced thermal loading and damage in semiconductors is of particular importance in the interaction of high intensity radiation with solid [14][15][16][17][18][19][20]. Laser-induced damage studies in semiconductors Ge, Si, InSb, GaAs and HgCdTe have been reported over a wide range of pulse durations and laser wavelengths [21][22][23][24][25][26]. However, only a few laser-induced thermal loading studies have been reported [27][28][29], especially for sub-band gap laser.…”

Section: Introductionmentioning

confidence: 99%

Effects of thermally generated carrier and temperature dependence mobility in InSb photoconductive detector under CW 10.6 µm laser irradiation

Jiang¹,

Zheng²,

Cheng³

et al. 2011

Semicond. Sci. Technol.

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The response mechanism of n-type indium antimonide photoconductive detectors under intense continuous wave (CW) 10.6 μm laser irradiation is investigated. The magnitude of the V oc signals and the exact shape of the signals vary greatly with laser power density and irradiation time. It is found that the signals begin to decrease at a critical time when laser power density is held in a constant value. If the irradiation time is fixed, the signals begin to decrease in a critical laser power density. The V oc signals for both radiation process and the end of laser irradiation have two different response time scales. A two-dimensional model of the detector for CW laser irradiation is presented. The calculated response curves agree well with the experimental results. The two separate time scales are found to be due to two thermally resistive bonding layers. Temperature-dependent mobility is the domain mechanism for the increasing tendency of V oc signals, and the decreasing tendency results from thermally generated carrier effect.

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Laser damage in silicon

Cited by 6 publications

References 10 publications

Evolution of laser damage in indium antimonide(InSb) at 1.06-μm wavelength

Evolution of laser damage in indium antimonide(InSb) at 1.06-μm wavelength

Analysis of thermal damage in bulk silicon with femtosecond laser micromachining

Effects of thermally generated carrier and temperature dependence mobility in InSb photoconductive detector under CW 10.6 µm laser irradiation

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