2006
DOI: 10.2351/1.2164480
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Laser helical drilling of silicon wafers with ns to fs pulses: Scanning electron microscopy and transmission electron microscopy characterization of drilled through-holes

Abstract: Electron microscopic methods (scanning electron microscopy and transmission electron microscopy) are used to characterize the precision and quality of microthrough-holes produced in 0.4 mm-thick silicon wafers by applying the pulsed laser helical drilling technique. The primary aim of the present work is to investigate how the mechanisms of material removal and redeposition change when the pulse width is systematically varied from nanosecond (ns) to femtosecond (fs) range (8 ns to 160 fs). Under the chosen pro… Show more

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Cited by 51 publications
(22 citation statements)
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“…This discrepancy of the widths of HAZ between the simulations and experiments suggest that in addition to the HAZ region identified by our simulations, the DBS is effected by the occurrence of other structure imperfections beyond the simulated HAZ region, 13 such as microcracking caused by the thermally induced tensile stress during the cooling process of resolidification in the silicon wafer. [14][15][16] The laser dicing parameters, including repetitions, pulse energy, scan velocity, and spot size, are known to effect the surface morphology and HAZ structure 17 which can also impact the DBS. Figure 6(a) displays the empirical DBS results for the following substrates; DRAM ("DRAM w/etch") and SiO 2 ("laser only").…”
Section: Resultsmentioning
confidence: 99%
“…This discrepancy of the widths of HAZ between the simulations and experiments suggest that in addition to the HAZ region identified by our simulations, the DBS is effected by the occurrence of other structure imperfections beyond the simulated HAZ region, 13 such as microcracking caused by the thermally induced tensile stress during the cooling process of resolidification in the silicon wafer. [14][15][16] The laser dicing parameters, including repetitions, pulse energy, scan velocity, and spot size, are known to effect the surface morphology and HAZ structure 17 which can also impact the DBS. Figure 6(a) displays the empirical DBS results for the following substrates; DRAM ("DRAM w/etch") and SiO 2 ("laser only").…”
Section: Resultsmentioning
confidence: 99%
“…The presented study was performed on a femto second laser with a wavelength of 1064 nm [3]. Correlations between type of ablated material, particle size distribution as well as particle concentration have been investigated.…”
Section: Methodsmentioning
confidence: 99%
“…Представленное здесь исследование было выпол-нено с использованием фемтосекундного лазера с длиной волны 1064 нм [3]. Изучалась корреля-ция между типом удаляемого материала, рас-пределением частиц по размерам, а также их концентрацией.…”
Section: описание экспериментаunclassified
“…The presented study was performed on a femtosecond laser with a wavelength of 1064 nm [5]. Correlations between type of ablated material, particle size distribution as well as particle concentration have been investigated.…”
Section: Methodsmentioning
confidence: 99%