2015
DOI: 10.1016/j.jallcom.2015.07.093
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Laser induced photoconductivity in sol–gel derived Al doped ZnO thin films

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Cited by 16 publications
(6 citation statements)
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“…It is possible to model the band structures, electron effective masses and mobilities in this way. 69 AZOs have been synthesised by a number of means including atmospheric-pressure (thermal) chemical vapour deposition, 72 RF and DC magnetron sputtering, 78,79 atomic layer deposition, 80 pulsed laser deposition, 81 sol-gel 82 and spray pyrolysis techniques. Still, the error appears to be systematic, meaning this remains a useful tool for comparative screening of materials at the early stages.…”
Section: Introductionmentioning
confidence: 99%
“…It is possible to model the band structures, electron effective masses and mobilities in this way. 69 AZOs have been synthesised by a number of means including atmospheric-pressure (thermal) chemical vapour deposition, 72 RF and DC magnetron sputtering, 78,79 atomic layer deposition, 80 pulsed laser deposition, 81 sol-gel 82 and spray pyrolysis techniques. Still, the error appears to be systematic, meaning this remains a useful tool for comparative screening of materials at the early stages.…”
Section: Introductionmentioning
confidence: 99%
“…In order to enhance these properties ZnO should be doped with various dopants. Doping of ZnO with Al, In and Ga were widely investigated by various group of researchers [6][7][8] and it resulted in ntype conductivity. In the present study bismuth (Bi) has been selected as the doping element.…”
Section: Introductionmentioning
confidence: 99%
“…The O1s peak can be decomposed into three components, centered at 530.4 ± 0.1 eV, 531.6 ± 0.1 eV and 536.1 ± 0.1 eV, and are defined by Gaussian fitting O I , O II and O III . The lower binding energy O I peak (530.4 eV) can be ascribed to the O 2− ion on the wurtzite ZnO structure, which is surrounded by Zn atoms and forms a fully complementary state with the surrounding adjacent O 2− ions [ 32 , 33 ]. The O II peak at intermediate binding energy (531.6 eV) is correlated with the O 2− ions in the oxygen-deficient region of the ZnO matrix [ 33 ].…”
Section: Resultsmentioning
confidence: 99%
“…The lower binding energy O I peak (530.4 eV) can be ascribed to the O 2− ion on the wurtzite ZnO structure, which is surrounded by Zn atoms and forms a fully complementary state with the surrounding adjacent O 2− ions [ 32 , 33 ]. The O II peak at intermediate binding energy (531.6 eV) is correlated with the O 2− ions in the oxygen-deficient region of the ZnO matrix [ 33 ]. The intensity of the component further reflects the concentration of oxygen vacancies, which can be assigned to the Zn-O bond and adsorbed oxygen including physically adsorbed or chemisorbed oxygen and hydroxides within the surface layer, respectively [ 34 , 35 , 36 ].…”
Section: Resultsmentioning
confidence: 99%