2007
DOI: 10.1117/12.711097
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Laser produced EUV light source development for HVM

Abstract: We develop a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO 2 master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO 2 laser driven Sn plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO 2 MOPA laser system is based on commercial high power cw CO 2 lasers. We… Show more

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Cited by 26 publications
(12 citation statements)
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“…16 Experiments were conducted with Nd:YAG laser generated Sn plate target plasma in the presence and absence of 1 T magnetic field and results showed that the FC signal decreased below the detection limit (about 3 orders) in the presence of magnetic field. 37 It was reported that for Nd:YAG LPP, the ions only weakly influence the deposition. 37 From the experimental results, it is estimated that the ion effect on deposition is below 1%.…”
Section: B Fc Ion Analysismentioning
confidence: 99%
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“…16 Experiments were conducted with Nd:YAG laser generated Sn plate target plasma in the presence and absence of 1 T magnetic field and results showed that the FC signal decreased below the detection limit (about 3 orders) in the presence of magnetic field. 37 It was reported that for Nd:YAG LPP, the ions only weakly influence the deposition. 37 From the experimental results, it is estimated that the ion effect on deposition is below 1%.…”
Section: B Fc Ion Analysismentioning
confidence: 99%
“…37 It was reported that for Nd:YAG LPP, the ions only weakly influence the deposition. 37 From the experimental results, it is estimated that the ion effect on deposition is below 1%. In case of a Nd:YAG drive laser and a Sn target, debris mitigation is therefore much more important than ion mitigation.…”
Section: B Fc Ion Analysismentioning
confidence: 99%
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“…Since 2002 we have developed CO 2 laser produced Tin plasma EUV source (CO 2 -Sn-LPP) which is the most promising solution as the 13.5nm high power (> 200W) light source for high volume production extreme ultraviolet lithography (EUVL) 5) . Because of its high efficiency, scalability and spatial freedom from plasma, we believe the CO 2 -Sn-LPP scheme is most promising candidate.…”
Section: Introductionmentioning
confidence: 99%
“…The laser power of the order of kW needed for industrial EUV lithography will result in greater target-particle production compared to that used in our experiment (laser power ∼10 W). The most successful scheme of the EUV source approaching the required intermediate focus point power of 115 W has turned out to be the combination of a tin droplet target (kind of mass-limited) irradiated with a CO 2 laser using the prepulse technique [49,50]. This also minimizes the debris problem.…”
mentioning
confidence: 99%