Lasing characteristics under high temperature operationof 1.55 µm strained InGaAsP/InGaAlAs MQW laserwith InAlAs electron stopper layer

Murai, Hitoshi; Matsui, Yasuhiro; Ogawa, Y.; Kunii, T.

doi:10.1049/el:19951458

Cited by 17 publications

(4 citation statements)

References 3 publications

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“…This explains why the use of Al 0.7 Ga 0.3 As as a cladding layer 8 and Al 0.85 Ga 0. 15 As as an electron blocking layer ͑this work͒ result in higher T 0 values than for In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P-clad devices. The idea of using materials with advantageous conduction-band offsets for electron blockage is not new: It has been proposed 13 and implemented 15 at long wavelengths ͑ ϭ1.55 m͒.…”

mentioning

confidence: 99%

High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Wade

Mawst

Botez

et al. 1997

Applied Physics Letters

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Efficient, high-power, Al-free active-region diode lasers emitting at ϭ0.83 m have been grown by low-pressure metalorganic chemical vapor deposition. Threshold-current densities as low as 220 A/cm 2 , maximum continuous wave ͑cw͒ power of 4.6 W, and a maximum cw wallplug efficiency of 45% are achieved from 1 mm long, uncoated devices with In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P cladding layers. Further improvement is obtained by replacing the p-In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P cladding layer with thin ͑0.1 m͒ electron-blocking layers of Al 0.85 Ga 0.15 As and In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P, and a pIn 0.5 ͑Ga 0.9 Al 0.1 ͒ 0.5 P cladding layer. Such devices provide a record-high T 0 of 160 K and reach catastrophic optical mirror damage ͑COMD͒ at a record-high cw power of 4.7 W ͑both facets͒. The corresponding COMD power-density level ͑8.7 MW/cm 2 )is ϳ2 times the COMD power-density level for uncoated, 0.81-m-emitting AlGaAs-active devices. Therefore, 0.81-m-emitting, Al-free active-region devices are expected to operate reliably at roughly twice the power of AlGaAs-active region devices. © 1997 American Institute of Physics. ͓S0003-6951͑97͒04302-7͔High-power diode lasers emitting in the wavelength range ϭ0.8-0.87 m are of interest because of important applications such as pump sources for Nd:YAG lasers. Such lasers conventionally use AlGaAs in the active region for р0.84 m, and thus suffer from short lifetimes and limited output powers by comparison to GaAs-active-region devices. The quaternary alloys InGa͑As͒P, lattice matched to GaAs, offer an attractive alternative to the AlGaAs/GaAs material system because: ͑1͒ the potential for better reliability, due to their inherent resistance to the formation of dark-line defects 1 and lower surface recombination velocity of InGaAsP compared to AlGaAs; 2 ͑2͒ a smaller increase in facet temperature 1 with drive current, and ͑3͒ the potential for growing reliable diode lasers on Si substrates. 3 However, the InGaAsP/GaAs material system has small conduction-band offsets, which cause diode lasers made of such material to suffer from massive carrier leakage. As a result, one obtains a relatively high threshold-current density, J th ; 1,4,5 low internal efficiency, i ; 5,6 and low threshold-current characteristic temperature, T 0 . 5,7 A recent attempt to solve the problem of carrier leakage 8 has been the use of high-band-gap material ͑Al 0.7 Ga 0.3 As͒ for the cladding layers which delivered high T 0 , promising reliability data, but also relatively high J th . We have designed and fabricated high-power, efficient, Al-free active-region devices by employing two features: ͑high-band gap͒ cladding layers of In 0.5 ͑Ga 0.5 Al 0.5 ͒ 0.5 P and the ''broad-waveguide'' concept. 9,10 The former significantly reduces carrier leakage, while the latter insures both a low internal loss coefficient, ␣ i (ϳ2 cm Ϫ1 ), since a large fraction of the optical energy is contained within the not intentionally doped ͑i.e., low loss͒ waveguide, 10 as well as a large transverse spot size ͑0.5 m full-width at hal...

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mentioning

confidence: 99%

High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Wade

Mawst

Botez

et al. 1997

Applied Physics Letters

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“…Since the mobility of electron is higher than that of hole, MQB structure is usually used at the p-type guiding layer as an electron barrier for longwavelength laser. 4,5 As compared with the conventional stepindex separate confinement heterostructure ͑SCH͒ laser, significant reduction of spontaneous emission from the guiding layer for the laser with MQB is observed, indicating the enhanced electron confinement by MQB. The resultant longer electron escape time is also beneficial for high speed modulation.…”

Section: Suppression Of Electron and Hole Leakage In 13 M Algainas/imentioning

confidence: 96%

Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

Pan

Chau

Chyi

et al. 1998

Applied Physics Letters

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The slope efficiency and threshold current density of 1.3 μm AlGaInAs/InP lasers with AlInAs–AlGaInAs multiquantum barrier (MQB) are experimentally studied and compared with the conventional step-index separate confinement heterostructure (SCH) laser. With the MQBs at the guiding layers, the characteristic temperature can be improved as much as 10 K as compared with the conventional SCH laser. This is attributed to the suppression of electron and hole leakage currents.

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“…Inserting an AlInAs electron stopper layer (ESL) into the p-side separate confinement heterostructure (SCH) layer provides a high potential barrier for the conduction band electrons and effectively eliminates the electron leakage. An improvement of temperature characteristics has been reported for 1.55 and 1.3 µm AlGaInAs-InP lasers due to the insertion of an AlInAs ESL [4,5]. However, to the best of our knowledge, there has been no report on the effect of an ESL on InGaAsP-InP lasers.…”

Section: Introductionmentioning

confidence: 97%

Improved performance of 1.3 m InGaAsP–InP lasers with an AlInAs electron stopper layer

Jin¹,

Tian²

2003

Semicond. Sci. Technol.

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We have fabricated 1.3 µm InGaAsP-InP strained-layer multi-quantum-well (MQW) lasers with an AlInAs electron stopper layer (ESL). The ESL was inserted between the MQW active layer and the p-side separate confinement heterostructure (SCH) layer to suppress electron leakage in the conduction band from the active region to the p-cladding layer. Lasers with an ESL exhibited much improved temperature characteristics of threshold current and external slope efficiency. As a result, a lower power penalty of 2.2 dB from 25 • C to 85 • C was achieved at an injected current of 60 mA. The insertion of an AlInAs ESL into the SCH layer is a successful way to realize the uncooled operation of 1.3 µm InGaAsP-InP lasers at high temperatures.

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Lasing characteristics under high temperature operationof 1.55 µm strained InGaAsP/InGaAlAs MQW laserwith InAlAs electron stopper layer

Cited by 17 publications

References 3 publications

High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

Improved performance of 1.3 m InGaAsP–InP lasers with an AlInAs electron stopper layer

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