Lasing up to 380 K in a sublimated GaN nanowire

Sergent, Sylvain; Damilano, B.; Vézian, S.; Chenot, Sébastien; Tsuchizawa, Tai; Notomi, Masaya

doi:10.1063/5.0004771

Cited by 13 publications

(14 citation statements)

References 32 publications

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“…The sublimation rate of the planes perpendicular to the surface was estimated to be only ~1% of the sublimation rate of the planes parallel to the surface. 37 Previously, this property was advantageously exploited for the successful top-down fabrication of GaN nanowires 37,38,39,40 or nanoholes. 41…”

Section: A Scanning Electron Microscopymentioning

confidence: 99%

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Damilano

Vézian

Chauvat

et al. 2022

Journal of Applied Physics

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InGaN/GaN single quantum wells were grown by molecular beam epitaxy on the silicon substrate onto thin AlN and GaN buffer layers. The InGaN/GaN structure is porosified using a combination of SixNy nanomasking and sublimation and compared with a non-porous reference. The photoluminescence efficiency at room temperature of the porosified sample is improved by a factor reaching 40 compared with the reference sample. Plan-view and cross-sectional transmission electron microscopy images reveal that the remaining material is free of dislocation cores. The regions around dislocations are, thus, preferentially sublimated. This explains the strong photoluminescence improvement of nanoporous InGaN/GaN samples.

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Section: A Scanning Electron Microscopymentioning

confidence: 99%

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Damilano

Vézian

Chauvat

et al. 2022

Journal of Applied Physics

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“…The diffusion of metallic species on the m-plane was studied for both GaN and AlN [73,83]. In both cases, the diffusion was found to be very anisotropic, with a surface diffusion barrier significantly lower in the [11][12][13][14][15][16][17][18][19][20]…”

Section: Growth Of Aln Nanotubesmentioning

confidence: 99%

“…In addition, the more recent development of selective area growth (SAG) has opened a new route to the growth of NWs using masked substrates. Eventually, the formation of top-down NWs by selective evaporation of a masked GaN layer was demonstrated by Sergent and co-workers [19], emphasizing the versatility of catalyst-free NW growth/elaboration processes.…”

Section: Introductionmentioning

confidence: 98%

“…However, if considering the a-plane, this surface diffusion barrier along [0001] direction is lowered down to 0.56 eV[73]. Similar to GaN NWs, AlN ones exhibit m-plane sidewalls, consistent with a lower (1-100) surface energy with respect to(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) [84]. Nevertheless, the appearance of(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) facets at the intersections of adjacent (1-100) planes[85] suggests that the Al diffusion channel from the sidewalls to the top is more likely on the (11-20) narrow facet connecting (1-100) planes facet, which exhibits a lower surface diffusion barrier along the [0001] direction.…”

mentioning

confidence: 97%

“…direction compared to[0001]. This is particularly true in the case of AlN, for which the surface diffusion barrier is 0.11 eV along[11][12][13][14][15][16][17][18][19][20] whereas it is 2.79 eV along [0001]. However, if considering the a-plane, this surface diffusion barrier along [0001] direction is lowered down to 0.56 eV[73].…”

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confidence: 99%

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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

et al. 2020

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The spontaneous growth of GaN nanowires in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the nanowire top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN 2 nanowires. In the case of AlN nanowires, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN nanotubes. I.

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GaN Ultraviolet Laser based on Bound States in the Continuum (BIC)

Chen

Xing

et al. 2023

Advanced Optical Materials

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structures. The optical BIC states in a wave system have been widely discussed and utilized. The quasi-BIC effect was first reported in passive systems in the form of a 1D line-and-space periodic structure. [6] Subsequently, some passive devices utilizing BIC modes supported in metallic metasurfaces, [7,8] dielectric metasurfaces, [9][10][11] and photonic elements [12,13] are demonstrated. In an active device, a BIC mode can support narrow-linewidth lasing with a smaller device size down to a few dozen periods of the BIC structure, which makes it possible for the laser device to be integrated at high density onto a chip. [14] Due to these advantages of BIC in light confinement, BIC-supported lasers in the NIR range were realized. [14][15][16][17] The lasing emission is observed from a nanoarray structure having feature sizes smaller than 10 µm. Later, BIC-supported lasers were realized in the visible range. [18][19][20][21][22][23][24] A highspeed optical switch with vortex lasing emission is also realized via BICs in the visible range. However, a BIC-supported nanolaser emitting in the ultraviolet (UV) has not yet been reported.With wavelengths ranging from 200 to 400 nm, UV nanolasers hold important applications in high-resolution bioimaging, laser therapy, spectroscopy, lithography, and optical storage. GaN with a wide direct bandgap of 3.41 eV at room temperature is the technological material employed for UV laser diodes. With the advanced of growth techniques such as metal-organic chemical vapor deposition (MOCVD) and vapor phase epitaxy growth method, [25,26] high-quality GaN can be readily deposited so that GaN-based UV lasers have been realized using singlecrystal GaN film, [27,28] Fabry-Perot nanowire cavities, [29][30][31][32][33] whispering-gallery-mode cavities, [34][35][36][37][38] and vertical cavity surface emitting lasers (VCSEL). [39,40] For random scattering lasers, Fabry-Perot lasers, and whispering-gallery-mode lasers, out-ofplane directional emission lasing remains difficult to achieve. In contrast, VCSELs are designed for out-of-plane emission but require a relatively large cavity to support lasing action. BICbased lasers have the potential to realize highly directional emissions with small device sizes.Here, we demonstrate a BIC-based UV laser with directional emission and tunable emission wavelength that is fabricated on a standard GaN thin film without any etching step. A 1D periodic resist structure supporting the BIC mode was fabricated directly on the GaN thin film by a single-step electron-beam (e-beam) Optical bound states in the continuum (BICs), realizing substantial suppression of out-of-plane radiative losses, have been utilized to realize strong light confinement and optical modes with high quality-factor (Q). Lasing actions with narrow linewidths based on optical BIC modes have been demonstrated in the near-infrared and the visible ranges, but BIC-based lasers in the ultraviolet (UV) region have not been reported. As light sources possessing wavelengths at the UV scale are esse...

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Lasing up to 380 K in a sublimated GaN nanowire

Cited by 13 publications

References 32 publications

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

GaN Ultraviolet Laser based on Bound States in the Continuum (BIC)

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