Latchup Window Tests

Azarewicz, Joseph L.; Hardwick, W. H.

doi:10.1109/tns.1982.4336451

Cited by 7 publications

(1 citation statement)

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“…Nikiforov et al studied the equivalence of laser simulated dose rate effect and developed the laser test of dose rate effects [6,7]. Some researchers focus on the unique latch window phenomenon of transient dose rate effects and con-duct related research [8,9,10,11,12,13,14,15]. Guillermo Vera and Marios Pattichis of the University of New Mexico and Daniel Llamocca of the University of Oakland and others conducted an experimental study on the instantaneous dose rate flipping effect of SRAM-type FPGAs in the 90nm process [16].…”

Section: Introductionmentioning

confidence: 99%

Research on the influences of well structure on dose rate effects in 65nm CMOS circuit

Chen

Han

et al. 2020

IEICE Electron. Express

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A short-time high-dose gamma ray will produce many electronhole pairs by the Compton effects in various semiconductor materials. Then pulse current will be generated in the devices and electronic system and affect their normal operation, which is called the Dose Rate Effects (DREs). Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the impacts of well structures on the DREs in 65-nm bulk CMOS inverter which is the most basic circuit unit are investigated. In this paper, the extend Gamma Radiation Model is used in simulations for effectively simulating the generation of electron-hole pairs in circuits. And present a idea for radiation hardening of bulk silicon CMOS circuits approach to DREs through optimization of well structure. The results of the simulations show that deep P-well (DPW) structure effectively reduces pulse amplitude of the voltage while the deep N-well (DNW) structure reduces the pulse amplitude only in high doping concentration. In addition, the pulse amplitude decreases with the doping concentration of deep well increasing. The mechanism is analyzed from the aspects of charge collection and potential change.

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