Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

Durini, Daniel; Spickermann, Andreas; Mahdi, Rana O.; Brockherde, W.; Vogt, H.; Grabmaier, Anton; Hosticka, B.J.

doi:10.1016/j.nima.2010.03.162

Cited by 23 publications

(6 citation statements)

References 12 publications

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“…Having such a long photoactive area due to the application requirements, it is considered difficult to realize the desired potential gradient within the n-well without performing necessary calculation and a TCAD simulation. The exact calculation of an extra n-well mask for creating nonuniformal doping concentration profile which lead to the generation of the electrostatic potential gradient within the n-well described in [1] .TCAD simulation of the n-well clearly exhibits the desired doping profile on the entire length of the photoactive area ( Fig 5.)…”

Section: Simulationmentioning

confidence: 99%

“…It remains fully depleted during the operation, if sandwiched between the substrate and a grounded p+ layer, localized on the surface of this n-well. The induced concentration gradient within the nwell in the direction of the readout node and the unpinned region of the detector generates an electrostatic potential i.e., lateral drift-field [1], which enables not only a better charge collection within the considerably extend photoactive area (200 ȝm), but also a high speed of the charge transfer from this photoactive area to the readout nodes.…”

Section: Developed Lateral Drift Field Photodectormentioning

confidence: 99%

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1.2 - Line Sensor for Fast, Time-Resolved Spectroscopy Measurements

Poklonskaya¹,

Durini²,

Jung³

et al. 2013

Proceedings OPTO 2013

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Section: Simulationmentioning

confidence: 99%

Section: Developed Lateral Drift Field Photodectormentioning

confidence: 99%

1.2 - Line Sensor for Fast, Time-Resolved Spectroscopy Measurements

Poklonskaya¹,

Durini²,

Jung³

et al. 2013

Proceedings OPTO 2013

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“…A lateral drift-field photodiode (LDPD) 1 based CMOS line sensor offers the possibility of time gating accompanied by non-destructive readout and charge accumulation over several cycles, which enhances the signal-to-noise ratio (SNR) and reduces the overall measurement time. The on-chip signal processing is an additional asset of CMOS based sensors.…”

Section: Ora Zewsmentioning

confidence: 99%

Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications

et al. 2014

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The performance of a fabricated CMOS line sensor based on the lateral drift-field photodiode (LDPD)1 concept is described. A new pixel structure was designed to decrease the charge transfer time across the photoactive area. Synopsys TCAD simulations were performed to design a proper intrinsic lateral drift-field within the pixel. The line sensor was fabricated in the 0.35 µm CMOS technology, and further characterized using a tailored photon-transfer method2 and the EMVA 1288 standard3. The basic parameters such as spectral responsivity, photo-response non-uniformity and dark current were measured at fabricated sensor samples. A special attention was paid to charge transfer time characterization4 and the evaluation of crosstalk between neighboring pixels - two major concerns attained during the development. It is shown that the electro-optical characteristics of the developed line sensor are comparable to those delivered by CCD line sensors available on the market, which are normally superior in performance compared to their CMOS based counterparts, but offering additional features such as the possibility of time gating, non-destructive readout, and charge accumulation over several cycles: approaches used to enhance the signal-to-noise ratio (SNR) of the sensor output

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“…In order to evaluate and compare the characteristics of all types of CMOS-based pn photodiodes achievable in a typical CIS process, we thoroughly investigated all possible n-layer processes on a p-type wafer, and designated three relevant processes. These are an n − layer used in a pinned photodiode process [12,13] as well as an n-well and an n + implant layer used in a standard CMOS logic process. These three distinct processes could produce three different pn junctions with different doping profiles and junction depths which are normally defined by the distance from the silicon surface.…”

Section: Photodiode Structures and Pixel Designmentioning

confidence: 99%

Performance comparison of CMOS-based photodiodes for high-resolution and high-sensitivity digital mammography

Bae¹,

Cho²,

Kim³

et al. 2011

J. Inst.

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In order to develop a high-resolution and high-sensitivity digital mamographic detector, to use a commercially-available and well-developed CMOS image sensor (CIS) process can be a cost-effective way. However, in any commercial CIS process, several different types of nor players can be used so that various pn-junction structures could be formed depending on the choice of n-and player combination. We performed a comparative analysis on the characteristics of three types of photodiodes formed on a high-resistivity p-type epitaxial wafer by applying three available n-layer processes in order to develop the high-sensitivity photodiode for a scintillator-based X-ray imaging detector. As a preliminar study, a small test-version CIS chip with an 80 × 80 pixel array of a 3-transistor active pixel sensor structure, 50 µm pitch and 80% fill factor was fabricated. The pixel area is subdivided into four 40 × 40 sub-arrays and 3 different types of photodides are designed for each sub-array by using n + , n − and n-well layers. All other components are designed to be identical for impartial comparison of the photodiodes only. Among 3 types, the n − /p-epi photodiode exhibited high charge-to-voltage gain (0.86 µV/e −), high quantum efficiency (49 % at 532 nm wavelength) and low dark current (294 pA/cm 2). The test CIS chip was coupled to a phosphor screen, Lanex Fine or Lanex Regular, both composed of Gd 2 O 2 S:Tb, and was tested using X-rays in a mammography setting. Among 6 cases, n − /p-epi photodiode coupled with the Lanex Regular also showed the highest sensitivity of 30.5 mV/mR.

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Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

Cited by 23 publications

References 12 publications

1.2 - Line Sensor for Fast, Time-Resolved Spectroscopy Measurements

1.2 - Line Sensor for Fast, Time-Resolved Spectroscopy Measurements

Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications

Performance comparison of CMOS-based photodiodes for high-resolution and high-sensitivity digital mammography

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