Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition

Abstract

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than 5 have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 μm thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

“…In particular, we have found that on precisely oriented (100) GaAs substrates the line seeds aligned 15 o , 30 o , 60 o or 75 o off from the <011> direction should be used to obtain a large value of the lateral to normal growth rate ratio. This finding is in agreement with the results published elsewhere [4,5,[9][10][11].…”

Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy

“…Many III/V semiconductor applications require epitaxial growth on patterned (non-ideal) substrates including epitaxial lateral overgrowth [1,2], formation of low-dimensional structures [3,4], and v-grooved lasers [5,6]. Growth on patterned substrates can also be used for investigating fundamental surface processes occurring during epitaxial growth [7][8][9].…”

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

“…Conversely, increasing the GaAs thickness from 1.0 to 2.0 mm on the patterned Si actually decreases the stress and in plane strain to 0.7 amd 5.7 Â 10 À4 , respectively. We surmise this strain relief is accomplished in a manner similar to epitaxial lateral overgrowth (ELO), where laterally grown material is demonstrated to result in improved material qualities [43].…”