Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2mask

“…To quantify the crystalline quality, a previous report found a 13% reduction of the XRD full width at half maximum (FWHM) value of the (004) reflection, from 890 to 775 arcsec, for GaAs grown on a planar Si substrate compared to that grown on a 2 µm patterned Si substrate, respectively [23]. In previous reports, although thermal cycle annealing was used, the FWHM value of the (004) XRD rocking curve for GaAs of thickness about 900 nm on a planar Si substrate was above 190 arcsec [8,24].…”

Uniformity improvement of selectively-grown InGaAs micro-discs on Si

“…Selective-area hetero-epitaxial growth of InGaAs on Si windows is a technology, which is quite suitable for that purpose. In addition, selective-area growth can be combined with epitaxial lateral overgrowth, which prevents dislocations on lattice-mismatched III-V/Si interface from spreading in the lateral direction [8][9][10][11][12][13][14][15].…”

Multi-technique characterisation of MOVPE-grown GaAs on Si

“…Successful heterogeneous integration of III-V materials on Si is a target of the electronics industry since these compound semiconductors offer a solution to future high speed and low power logic applications [1][2][3][4][5]. GaAs is a desirable material for modern microelectronics due to properties that include a large band gap, high carrier mobility, stability against radiation, good response rate, and low energy losses in the devices and integrated circuits based upon it.…”

“…Problems with anti-phase domains (APD) appearing in GaAs epilayers can be removed by using either Ga or As pre-layers and tilted substrates [1,2] together with an optimized substrate preparation in order to get a clean double-step surface. Nevertheless, the key challenge lies in the significant 4.1% lattice mismatch and 63% thermal expansion mismatch between GaAs and Si.…”