Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Abstract

We have used a novel, simple technique based on bevel etching, to fabricate samples containing lateral n-i-p junctions in an InSb/InAlSb quantum well. The structure was designed by self-consistent solution of Schrödinger's and Poisson's equations, and grown by molecular beam epitaxy on a SI GaAs substrate. Current/voltage characteristics were measured as a function of temperature between 10 and 80 K, and rectifying characteristics were obtained over the whole temperature range.

InSb ∕ AlInSb quantum-well light-emitting diodes

“…4 This would enable long distance free-space secure communication, via quantum cryptography, with low atmospheric scattering and absorption. 5 In this letter we describe InSb/ Al x In 1−x Sb QW light-emitting-diodes ͑LEDs͒ which, combined with a simple technique for the fabrication of lateral diodes, 6 represent a significant step towards the fabrication of a SAW single photon source emitting in the midinfrared. Additionally, the LEDs described here might also find application in areas such as gas sensing.…”

In Sb ∕ Al x In 1 − x Sb quantum-well light-emitting diodes with high internal quantum efficiencies

“…The motivation of the work presented here is the realization of a surface acoustic wave ͑SAW͒ based single photon source 2 using InSb quantum wells to give emission in the 3-5 m wavelength region. 3 This would enable long distance free-space secure communication, via quantum cryptography, with low atmospheric scattering and absorption. In the proposed SAW single photon source single electrons are injected into the p-type region of a lateral n-i-p quantumwell diode, and a prerequisite for the realization of this device is therefore high radiative recombination efficiency in the p-type region.…”

Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys

“…Besides, AlInSb provides a convenient strain-compensating barrier material for mid-infrared inter band cascade lasers [10] and other antimonide device structures. Mid-infrared light-emitting diodes are the subject of much research and have great potential in such applications as gas sensing and free-space quantum communications [11,12]. Some of the high brightness light-emitting diodes at the wavelengths range k = 3-10 lm that have been recently reported [13], were fabricated from Al x In 1Àx Sb, where the peak emission wavelength can be tailored by varying the Al concentration.…”