Lattice disorder and recombination centres in heat-treated FZ silicon

Negrini, P.; Passari, L.; Poggi, Antonella; Servidori, M.; Susi, E.

doi:10.1002/pssa.2210920116

Cited by 11 publications

(7 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…No more than a 10% difference in oxygen content was observed from the center to the periphery of the wafers. Appreciable nonhomogeneity was found instead in lifetime, as already seen in FZ crystals (13), for less doped samples. In order to avoid any uncertainty due to this inhomogeneity, samples to be compared were taken from controlled zones of the same wafer and tested before and after each treatment.…”

Section: Methodsmentioning

confidence: 74%

See 1 more Smart Citation

Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon

Susi¹,

Lulli²,

Passari³

1987

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

Thermally induced defects in CZ silicon are studied, with the aim of identifying the mechanisms responsibe for lifetime changes and the role of oxygen in them. For low temperature heatings lifetime can either decrease or increase: a gettering activity of neutral oxygen clusters which participate in the dissociation equilibria of Fe-B pairs is postulated. The effects of pretreatments performed by a conventional diffusion furnace or by rapid thermal annealing are discussed.

show abstract

Section: Methodsmentioning

confidence: 74%

“…In FZ crystals we observed a degradation of lifetime after annealing even at temperatures as low as 350~ (13). This adverse effect is reduced by boron doping and disappears for Nb > 1017 cm -3.…”

mentioning

confidence: 79%

Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon

Susi¹,

Lulli²,

Passari³

1987

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Before any treatment wafers were tested for lifetime, resistivity, oxygen content, and crystal perfection homogeneity. As usual (11,13) appreciable nonhomogeneity in lifetime has been observed, with a maximum difference of 50% between the center and the periphery of the wafer. To avoid experimental uncertainties due to this nonhomogeneity, samples to be compared were taken from nearby zones of the same wafer, so that lifetime variations of more than 20% have been considered as significant.…”

Section: Experimentelmentioning

confidence: 92%

“…The most interesting phenomena were observed in the 350-450~ range, with a reduction in lifetime connected to a decrease of lattice order (11).…”

mentioning

confidence: 97%

“…In our previous work on the effects of conventional furnace thermal treatments on minority carrier lifetime and crystal disorder in lightly and moderately doped p-type FZ silicon the existence of several phenomena in different temperature ranges has been displayed. The most interesting phenomena were observed in the 350-450~ range, with a reduction in lifetime connected to a decrease of lattice order (11).…”

mentioning

confidence: 99%

See 1 more Smart Citation

Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

Poggi¹,

Susi²

1991

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

Rapid thermal annealing (RTA) techniques, widely employed in device technology, can be used to study defect formation and annealing mechanisms. Interesting results have been obtained by us comparing the effects of electron beam and lamp rapid treatments on the equilibria between residual impurities, point defects, and their aggregates during low-temperature annealing of monocrystalline silicon. The lamp treatment results are comparable to short-time furnace ones, while the presence of defects induced by the RTA treatment in itself has been detected after the use of electron beam.The rapid thermal annealing techniques allow an improvement of the productivity/cost ratio and defect control in device processing, owing to the shorter processing times and lower contamination with respect to furnace annealings, and to the possibility of selecting the desired process from the undesired one, exploiting the differences in the reaction rates. This last possibility makes the use of RTA a useful tool for the studies of defect formation and annealing mechanisms in a large number of research fields, like metastability, gettering, diffusion, oxidation, and so on.To this purpose the isothermal (i.e., with heating times longer than 1 s) processes are employed. These have been performed by arc and halogen lamps, plasma, electron beams, but in recent years large-area incoherent lamps have come to be the most reliable heat source for the current technological applications, while electron beams are candidates for further developments toward the very rapid thermal annealing (VRTA) techniques (1).A considerable amount of experimental work has been done in defining the best technological conditions for the use of RTA; the connected physical mechanisms, like dopant diffusion, ion implant defect annealing, and so on, have been investigated, too (2). Less effort has been devoted to the applications of RTA as a tool for defect equilibria studies. Some work has been devoted to annealing and regrowth of thermal donors in silicon (3), and to gettering phenomena (4). Very few data exist of the interactions with the sample and the physical processes intrinsically connected to the use of these heat sources.We have employed RTA annealings to study the interactions between oxygen, carbon, and other residual impurities, point defects, and their aggregates that have been shown to be responsible for the characteristic changes in silicon electrical properties occurring during a thermal process (5-10).In our previous work on the effects of conventional furnace thermal treatments on minority carrier lifetime and crystal disorder in lightly and moderately doped p-type FZ silicon the existence of several phenomena in different temperature ranges has been displayed. The most interesting phenomena were observed in the 350-450~ range, with a reduction in lifetime connected to a decrease of lattice order (11).In Czochralski (CZ) crystals of corresponding dopant content after a similar thermal treatment, the recombination center concentration is controlled by tw...

show abstract

Determination of minority carrier mobility in silicon from stationary and transient lifetime measurements

Susi¹,

Passari

Merli

et al. 1988

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

The minority carrier diffusion coefficient in Si as a function of dopant density is evaluated by comparing the diffusion length, as obtained by a steady state method (using a combination of the photoelectromagnetic (PEM) effect and the steady state photoconductivity (PC) effect) and a life‐time obtained by the photoconductivity decay (PCD) method. Within the limits of the experimental data dispersion, the electron minority diffusinn coefficients are found to be comparable to the majority ones in the doping range 3 × < NA < 3 × 1017 cm−3. The minority hole diffusion coefficients are about 36% higher than the majority hole coefficients in the doping range 6.1 × × 1013< ND < 7.1 × 1016cm−3.

show abstract

Lattice disorder and recombination centres in heat-treated FZ silicon

Cited by 11 publications

References 9 publications

Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon

Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon

Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

Determination of minority carrier mobility in silicon from stationary and transient lifetime measurements

Contact Info

Product

Resources

About