Lattice‐matched boronphosphide (BP)/hexagonal GaN heterostructure for inhibition of dislocation penetration

Abstract

The crystallographic feature of a metal-organic CVD grown zinc-blende BP/wurtzite-GaN heterostructure was characterized utilizing high-resolution TEM and TED techniques. On the heterostructure system, the epitaxial relationship was revealed to be (0001), 〈a-axis〉-GaN//(111), 〈110〉-BP. (111)-BP was also found to be orientated in the "double positioning" with tracing hexagonal shape of (0001)-GaN probably because of the matching in the spacings between the a-axis of GaN (a = 0.319 nm) and the {110}-planes of BP (= 0.320 nm). (111)-BP was additionally recognized to stack in the c-direction of GaN with period of just half value of the c-axis (c = 0.518 nm). In addition to the matching property, (111)-BP joined with (0001)-GaN was found to be effective for annihilation of dislocations penetrating from the underneath GaN.1 Introduction Gallium nitride(GaN)-related semiconductors, such as gallium nitride (GaN) and indium nitride(InN), are attracting much attention as a promising material for high-brightness GaInN heterojunction light-emitting diodes (LEDs), GaInN/GaN double heterostructure (DH) laser diodes (LDs), high-frequency AlGaN/GaN heterojunction power FETs, etc. With an increasing technical demand to improve the performance of the GaN-based semiconductor devices, crystallographic characterization is required to clarify the influence of crystalline defects in the GaN-related material on the device performance. Advanced researches have been therefore done, for example, to study the effect of dislocations in the GaN for the improvement of light emission intensity of GaN-based LEDs [1]. According to the analysis based on the non-radiative carrier recombination model [1], the dislocation density in the GaNrelated material is recommended to reduce at least down to the order of 10 7 cm -2 to obtain a higher emission efficiency. Development of techniques for suppression of dislocations in the GaN-related materials becomes important to produce high-performance GaN-based LEDs and LDs. In addition to the traditional growth technique, recent techniques, such as ELO [2] and delta (δ)-doping of silicon (Si) impurity into GaN layer is recently proposed to annihilate threading screw dislocations for (111)-Si/GaN heterostrucure system [3].In this paper, boronphosphide (BP), one of the III-V compound semiconductors, is grown on GaN to form a lattice-matched heterojunction, and effective annihilation of the dislocation penetrating from underneath GaN by the heterojunction system is reported.

VLS growth of GaN nanowires on various substrates

“…ð0 0 0 1Þ GaN jjð1 1 1Þ BP jjð1 1 1Þ GaPðAsÞ , h1 12 0i GaN jjh1 1 0i BP jjh1 1 0i GaPðAsÞ This epitaxial relationship between the h-GaN wires and Ga(As)P/BP template is in agreement with that determined for BP layers grown on (0 0 0 1) GaN [12].…”

Organometallic Chemical Vapor Deposition Growth of Heterostructure of Wide Band Gap and Transparent Boron Phosphide on Silicon

“…2,3) Archer et al 4) investigated the optical properties of melt-grown BP bulk crystals, and obtained a large band gap energy for BP bulk crystals. BP bulk crystals have also been grown by chemical vapor deposition (CVD) procedures, such as hydride CVD, 5,8) halogen CVD, 6,8) and organometallic CVD (MOCVD), 7,[9][10][11] on various substrate materials, namely, Si, [5][6][7] hexagonal-structure SiC, 8) GaP, 9) and wurtzite GaN. 10,11) In spite of the fact that the optical properties of BP layers grown by hydride CVD employing a diborane (B 2 H 6 )-phosphine (PH 3 ) reaction system have been reported, 12) little is known about the optical properties of MOCVD-grown BP layers.…”

“…BP bulk crystals have also been grown by chemical vapor deposition (CVD) procedures, such as hydride CVD, 5,8) halogen CVD, 6,8) and organometallic CVD (MOCVD), 7,[9][10][11] on various substrate materials, namely, Si, [5][6][7] hexagonal-structure SiC, 8) GaP, 9) and wurtzite GaN. 10,11) In spite of the fact that the optical properties of BP layers grown by hydride CVD employing a diborane (B 2 H 6 )-phosphine (PH 3 ) reaction system have been reported, 12) little is known about the optical properties of MOCVD-grown BP layers. In this study, BP layers are grown heteroepitaxially on a Si substrate by atmosphericpressure MOCVD, and the optical properties of the MOCVD-grown BP layers, such as the wavelength distributions of refractive index and extinction coefficient, are investigated.…”

Suppression of indium vaporization from GaN/GaInN superlattice by BP capping layer

“…To obtain a desirable emission wavelength from a GaInN light-emitting layer, it is therefore important to suppress the vaporization of In from the light-emitting layer during overgrowth of a layer [3], such as p-type cladding layer, at a high growth temperature. As a semiconducting material applicable to form a p-type clad layer, refractive boron phosphide (BP) has been proposed recently [4]. The formation of a p-type BP layer requires, however, a high growth temperature, 1025 C [4], at which the vaporization of In will occur.…”

“…As a semiconducting material applicable to form a p-type clad layer, refractive boron phosphide (BP) has been proposed recently [4]. The formation of a p-type BP layer requires, however, a high growth temperature, 1025 C [4], at which the vaporization of In will occur. In this letter, a BP layer is applied as a capping layer to suppress the vaporization of In from a GaInN light-emitting layer for a high-temperature overgrowth of a p-type BP layer.…”