Lattice parameter study of silicon uniformly doped with boron and phosphorus

Celotti, G.; Nobili, D.; Ostoja, P.

doi:10.1007/bf00761802

Cited by 99 publications

(49 citation statements)

References 26 publications

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“…The compositions of the Si spheres including their Si, B, and P contents are shown in Table 1. The P concentration estimated from EDS was in good agreement with that from a previous report, 30) as shown in Fig. 4(a).…”

Section: Si Spheressupporting

confidence: 81%

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

et al. 2016

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2Clean Venture 21 Corporation, Japan Silicon (Si) spheres were prepared by a powder melting method, and their microstructures and optical properties were investigated. The lattice constant of the Si spheres increased upon phosphorus (P) diffusion, compared to that before P diffusion. This was attributed to the presence of interstitial P atoms. A uorine-doped tin oxide (SnO x :F y ) anti-re ection lm was then coated on the surface of the Si spheres. Changes in the lattice constant and bandgap of the SnO x :F y lm occurred upon subsequent annealing. This was attributed to changes in the composition of the SnO x :F y lm.

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Section: Si Spheressupporting

confidence: 81%

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

et al. 2016

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“…However, to be studied single crystals should have a high degree of structural perfection. Doping of Si single crystals is known to lead to changes in lattice parameters [3][4][5][6][7][8]. Impuritie atoms of radii smaller than the covalent atomic radius of Si (B or P) cause crystal lattice contraction, while atoms of larger atomic radii (Sb) cause its expansion.…”

Section: Introductionmentioning

confidence: 99%

Lattice parameter measurements of boron doped Si single crystals

Kucytowski

Wokulska²

2005

Cryst. Res. Technol.

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The influence of boron dopants and oxygen impurity on lattice parameters of Si single crystals is studied. Concentrations of boron and oxygen were determined by the Bond method. A linear contraction of the crystal lattice was observed due to high boron doping of Si single crystals. Lattice parameters of Si single crystals increased below the lower limit boron concentration N B = 2.1 × 10 16 cm -3. This proves the presence oxygen at low boron concentrations. In highly boron-doped Si single crystals no oxygen influence on lattice parameter change was observed.

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“…19 -1×10 20 at/cm 3 changes the silicon lattice constant since their covalent radii are different than silicon radius [22]. This aspect needs to be taken into account when epitaxial layers are grown in order to control the lattice mismatch which can generate dislocations and wafer bowing.…”

Section: -1×10mentioning

confidence: 99%

Growth and characterization of heavily doped silicon crystals

Scala

Porrini

Borionetti

2011

Cryst. Res. Technol.

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Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, largediameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron.

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Lattice parameter study of silicon uniformly doped with boron and phosphorus

Cited by 99 publications

References 26 publications

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

Microstructures and Optical Properties of Silicon Spheres for Solar Cells

Lattice parameter measurements of boron doped Si single crystals

Growth and characterization of heavily doped silicon crystals

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