2019
DOI: 10.1103/physrevmaterials.3.114404
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Lattice relaxations around individual dopant atoms in SrTiO3

Abstract: The local atomic structure around individual dopant atoms can directly influence the electronic properties of a doped material. Here, we use quantitative scanning transmission electron microscopy to study the local lattice relaxations around Sm dopant atoms in SrTiO 3 thin films. These films have recently been shown to undergo successive ferroelectric and superconducting transitions when strained. We show that neighboring Ti-O columns move away from the columns that contain Sm dopants. The observed displacemen… Show more

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Cited by 8 publications
(6 citation statements)
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“…Large, random displacements are therefore associated with the Sm dopant atoms. The complex displacement fields around the dopant atoms are similar to those analyzed in detail in ref for unstrained Sm-doped SrTiO 3 films and involve Ti–O columns moving away from the Sm dopants. This is not a size effect but due to electronic/electrostatic interactions .…”
Section: Resultssupporting
confidence: 72%
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“…Large, random displacements are therefore associated with the Sm dopant atoms. The complex displacement fields around the dopant atoms are similar to those analyzed in detail in ref for unstrained Sm-doped SrTiO 3 films and involve Ti–O columns moving away from the Sm dopants. This is not a size effect but due to electronic/electrostatic interactions .…”
Section: Resultssupporting
confidence: 72%
“…This is not a size effect but due to electronic/electrostatic interactions . In keeping with the expected behavior of a point defect, the displacements due to the Sm dopants do not form correlated nanodomains but only affect the atom columns in their immediate vicinity (see also ref ). We also note that the Sm dopants are the main point defect in these films.…”
Section: Resultsmentioning
confidence: 55%
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“…Images of polar regions above the Curie temperature of ferroelectric SrTiO 3 would provide the most direct evidence of an order-disorder transition. Atomic resolution high-angle annular dark-field imaging in scanning transmission electron microscopy (HAADF-STEM) is a powerful technique that is capable of determining the atomic column positions with picometer precision [40][41][42][43] and, consequently, should be able to detect regions that contain Ti columns that are off-centered from their nonpolar positions. Here, we use HAADF-STEM to measure static Ti-column displacement vectors at room temperature in the paraelectric phase of compressively strained SrTiO 3 films, which undergo a ferroelectric transition below 140 K [26,27,44].…”
mentioning
confidence: 99%
“…Figure 2 highlights the effect of doping and free charge carriers on the formation of polar domains in the strained and doped films. Sm dopants cause local lattice distortion in SrTiO3 films [3]. Color contour maps of Sm doped samples show the increase in lattice distortion caused by the Sm dopant (~0.5% (a), ~1%(b) and ~2%(c)).…”
mentioning
confidence: 99%