Lattice site changes of ion implanted 8Li in InP studied by alpha emission channeling

Wahl, Ulrich; Hofsäß, H.; Jahn, S.G.; Winter, Stefan; Recknagel, E.

doi:10.1016/0168-583x(92)95469-8

Cited by 23 publications

(7 citation statements)

References 21 publications

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“…This behavior is similar to the one observed in the cubic III-V compounds, where Li interacts with the group III vacancies forming substitutional Li in the group III sublattice. 16,21 We assume that in GaN Li also occupies substitutional Ga-sites. Most likely Li 1 is the mobile species in this reaction, because mobile vacancies should also give rise to structural annealing after heavy ion implantation.…”

Section: Resultsmentioning

confidence: 99%

“…Data acquisition was accomplished using a setup described elsewhere. 16,21 The ␣-emission yield over an angular range of Ϯ2.5°about the different crystallographic directions was measured as a function of implantation temperature, which in this online measurement is identical with the measurement temperature, between 300 and 770 K in steps varying between 30 and 100 K. The ␣-emission yield is usually plotted as normalized yield with respect to the yield for an off-axis random direction. Typically, the implantation dose needed to acquire a single spectrum such as that shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

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Lattice site location studies of ion implanted Li8 in GaN

Dalmer¹,

Restle²,

Sebastian³

et al. 1998

Journal of Applied Physics

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The lattice sites of ion implanted Li atoms in GaN were studied as a function of implantation temperature between room temperature and 770 K. We measured the channeling and blocking patterns of ␣-particles emitted in the radioactive decay of implanted 8 Li ions to determine the Li lattice sites. Below 700 K Li atoms occupy mainly interstitial sites in the center of the c-axis hexagons at positions c/4 and 3c/4, where c is the lattice constant in c-axis direction. Around 700 K Li starts to diffuse and presumably interacts with vacancies created in the implantation process. This leads to the formation of substitutional Li above 700 K. An activation energy of about 1.7 eV for interstitial Li diffusion was determined.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Lattice site location studies of ion implanted Li8 in GaN

Dalmer¹,

Restle²,

Sebastian³

et al. 1998

Journal of Applied Physics

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“…Data acquisition was accomplished using the set-up described in Ref. [12]. The implantation dose needed to acquire a single spectrum such as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Lattice sites of ion implanted Li in diamond

Restle

Bharuth‐Ram

Quintel

et al. 1995

Applied Physics Letters

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Radioactive Li ions were implanted into natural IIa diamonds at temperatures between 100 K and 900 K. Emission channelling patterns of α-particles emitted in the nuclear decay of 8 Li (t 1/2 = 838 ms) were measured and, from a comparison with calculated emission channelling and blocking effects from Monte Carlo simulations, the lattice sites taken up by the Li ions were quantitatively determined. A fraction of 40(5)% of the implanted Li ions were found to be located on tetrahedral interstitial lattice sites, and 17(5)% on substitutional sites. The fractions of implanted Li on the two lattice sites showed no change with temperature, indicating that Li diffusion does not take place within the time window of our measurements.

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“…The year 1990 saw the first application of position-sensitive detectors (PSDs) using the principle of resistive charge division for the detection of α-emission channeling [2,5,6,17]. The method of obtaining two-dimensional patterns recorded by a PSD instead of rotating the sample step by step in front of a collimated non-position-sensitive detector (which was used in all previous experiments) increased the efficiency of the experiments by about 1−2 orders of magnitude.…”

Section: Historical Remarksmentioning

confidence: 99%

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN's ISOLDE Facility

Wahl¹,

Correia²,

Costa³

et al. 2014

Exotic Nuclei

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We give an overview on the historical development and current program for lattice location studies at CERN's ISOLDE facility, where the EC-SLI (Emission Channeling with Short-Lived Isotopes) collaboration maintains several setups for this type of experiments. We illustrate that the three most decisive factors for the success of the technique are access to facilities producing radioactive isotopes, position-sensitive detectors for the emitted decay particles, and reliable simulation codes which allow for quantitative analysis.

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Lattice site changes of ion implanted 8Li in InP studied by alpha emission channeling

Cited by 23 publications

References 21 publications

Lattice site location studies of ion implanted Li8 in GaN

Lattice site location studies of ion implanted Li8 in GaN

Lattice sites of ion implanted Li in diamond

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN's ISOLDE Facility

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