Layer-dependent photoresponse of 2D MoS₂ films prepared by pulsed laser deposition

Abstract

Due to the layered structure and thickness-dependent bandgap of MoS2, it is intriguing to investigate the layer-dependent performance of MoS2 based photodetectors.

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

“…Particularly, the optical bandgap of III–VI layered semiconductors ranges from 1.25 (IR) to 3.05 eV (UV) ( Table 1 ), showing a large optical window in 2D limit, which makes them potential candidates for different functional optoelectronic devices, such as LEDs, phototransistors, and solar cells ( Figure ) . One typical example of III–VI semiconductors is 2D layered InSe, exhibiting amazing electronic transport properties (electron mobility ≈ 1055 cm 2 V −1 s −1 ) and broadband photodetection from UV to near infrared (NIR) attributing to its narrow and tunable bandgaps, which are much superior to those of MoS 2 . Meanwhile, extremely high photoresponsivity of around 10 4 A W −1 and ultrafast response speed (≈120 µs) can be obtained in InSe photodetectors, which greatly satisfy the demand for future optoelectronics.…”

Ultrahigh Speed and Broadband Few‐Layer MoTe2/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

“…Since the high‐energy pulsed laser shows no composition selectivity, the PLD‐grown films have nearly the same the stoichiometric ratio as the target. Besides, thickness of the films can be readily tuned by changing the laser pulse number . In light of this, PLD method is adopted in this work to deposite FL‐MoTe 2 film with high uniformity and high crystal.…”

Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

“…Key metrics include (1) amounts, morphologies and stoichiometries of the precursors [5,25], (2) temperature of the precursors and substrate [5,25,26], (3) location and distance between of inlet, precursors and substrate [4], (4) pressure of the reaction chamber [5], and (5) carrier gas types and Emerging 2D materials below 100 µm in lateral dimensions is highlighted in yellow. b Lateral dimensions are elucidated for each 2D material derived from different synthesis routes [2,3,7,. c Record lateral dimensions achieved as a single crystal [3,11,17,20,21,23,24,38,41,46,57,58,66].…”

“…Emerging 2D materials below 100 µm in lateral dimensions is highlighted in yellow. b Lateral dimensions are elucidated for each 2D material derived from different synthesis routes [ 2 , 3 , 7 , 10 – 71 ]. c Record lateral dimensions achieved as a single crystal [ 3 , 11 , 17 , 20 , 21 , 23 , 24 , 38 , 41 , 46 , 57 , 58 , 66 ].…”

“…The thickness of 2D crystals is influential in optical, vibrational and electronic properties. Therefore, the control in thickness and uniformity of synthesis is instrumental for the reliability of device performance [2][3][4][5][6][7]. According to laws of thermodynamics, synthesis at temperatures above 0 K will result in the formation of defects in all crystals [8,9].…”