Layered memristive and memcapacitive switches for printable electronics

Abstract

Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices. Here, we demonstrate that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 10(2) to 10(8) Ω combined with low programming voltages of 0.1-0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (<3 nm) oxide layer. With strong nonlinearity in switching dynamics, different mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

Electro-Photo-Sensitive Memristor for Neuromorphic and Arithmetic Computing

“…In addition, the threshold voltages to switch the conductance of the device were shown to be state-dependent, which emerges from the interplay of a memristance with a memcapacitance. In contrast to other realizations of memristors, [47][48][49] memristance and memcapacitance switching of the presented device are observed between different terminals. The memristance is measured in the two-terminal geometry and the memcapacitance between the lateral gates and the wire.…”

Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)

“…Two-dimensional (2D) layered van der Waals (vdW) materials, such as MoS 2 and WS 2 , are considered to be promising electrolytes for use in extremely thin CBRAM devices because they can be exfoliated to atomic layers. Recently, Bailey et al reported ion migration-based synaptic memristor devices containing 2D layered vdW materials 17 . Their surface oxide layers with a subnanometer thickness exhibited an excellent synaptic plasticity and learning capacity in response to~100-mVlevel stimuli comparable to neuron spikes, which is thought to result from the formation of electrically induced conductive bridges consisting of oxygen vacancies 17 .…”

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

“…5 Furthermore, their usage has also been demonstrated to improve the stability of organic 6 and perovskite 7 solar cells, as well as of organic light emitting devices. 8 Other applications based on MoO x films, such as gas and chemical sensors [9][10][11] and storage devices such as memristive, memcapacitive 12 and Lithium-ion 13 devices were also reported recently.…”