Lead contacts on Si(111):H-1 × 1 surfaces

Kampen, Thorsten U.; Mönch, Winfried

doi:10.1016/0039-6028(95)00079-8

Cited by 105 publications

(81 citation statements)

References 22 publications

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“…Güler et al [31] also mentioned that higher ideality factors among identically prepared diodes were often found to accompany lower observed BHs. This may be attributed to lateral barrier inhomogeneities in SDs [1,25,30,41,42]. Such behaviors of the BH and the ideality factor can be explained by means of the bias dependence of the saddle-point potential of an inhomogeneous BH [1,25].…”

Section: Resultsmentioning

confidence: 99%

“…The electronic properties of the MS contacts are characterized by their barrier height (BH). The BH is the difference between the edge of the respective majority-carrier band of the semiconductor and the Fermi level at the interface [7]. Although Schottky barrier diodes (SBDs) have already been studied for more than fifty years, the fundamental mechanisms that determine the BH are still not fully understood [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…However, a linear correlation between both quantities was observed for Ag/S/n-GaAs(001) [14], Ag/n-Si(111)-"7×7", Ag/n-Si(111)-1×1 [15], Ag/n-Si(111):H-1×1 [16], Pb/H:p-Si(111) and Pb/n-Si(111) Schottky diodes [8]. Therefore, the barrier heights of all our Ag-and Pb/n-αGaN contacts are plotted in Figure 2 versus their ideality factors.…”

Section: Resultsmentioning

confidence: 99%

“…Deviations from what is predicted by the MIGS are then caused by secondary mechanisms, e.g. interface dipoles induced by specific interface structures or layers of foreign atoms and interface defects [8].…”

Section: Introductionmentioning

confidence: 90%

Metal Contacts on a-GaN

Kampen¹,

Mönch²

1996

MRS Internet j. nitride semicond. res.

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The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observations were previously reported for metal contacts on Si (111) and GaAs (110) surfaces. The barrier heights of ideal Schottky contacts are characterized by image force lowering of the barrier only. This gives an ideality factor of 1.01. From our data we obtain barrier heights of 0.82 eV and 0.73eV for ideal Ag and Pb contacts on GaN, respectively. The metal-induced gap states (MIGS) model predicts the barrier heights of ideal Schottky contacts on a given semiconductor to be linearly correlated with the electronegativities of the metals. The two important parameters of this MIGS-and-electronegativity model are the charge neutrality level (CNL) of the MIGS and a slope parameter. The CNL may be calculated from the dielectric band gap and using the empirical tight-binding method. The slope parameters are given by the optical dielectric constant of the respective semiconductor. The predictions of the MIGS model for metal/GaN contacts are confirmed by the results presented here and by barrier heights previously reported by others for Au, Ti, Pt, and Pd contacts on GaN.

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“…Tung [12] they increased the inhomogeneity of barriers. The experimental effective BHs and ideality factors obtained from the I-V and C-V characteristics differ from diode to diode even if they are identically prepared [12,[14][15][16][17]. This has been attributed to interfacial patches, i.e.…”

Section: Introductionmentioning

confidence: 99%

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

Chawanda¹,

Roro²,

Auret³

et al. 2010

Materials Science in Semiconductor Processing

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a b s t r a c tWe have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5 Â 10 15 cm À 3 . The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements at a temperature of 296 K. The effective barrier heights from I-V characteristics varied from 0.492 to 0.550 eV, the ideality factor n varied from 1.140 to 1.950, and from reverse bias capacitance-voltage (C À 2 -V) characteristics the barrier height varied from 0.427 to 0.509 eV. The lateral homogenous barrier height value of 0.558 eV for the contacts was obtained from the linear relationship between experimental barrier heights and ideality factors. Furthermore the experimental barrier height distribution obtained from I-V and (C À 2 À V) characteristics were fitted by Gaussian distribution function, and their mean values were found to be 0.529 and 0.463 eV, respectively.

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Lead contacts on Si(111):H-1 × 1 surfaces

Cited by 105 publications

References 22 publications

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Metal Contacts on a-GaN

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

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