Lead-free Ba2Bi4Ti5O18 thin film capacitors for energy storage applications

Song, Dongpo; Yang, Jie

doi:10.1016/j.rinp.2019.102175

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…Aurivillius oxide compounds often exhibit excellent dielectric properties, making them potentially useful as such energy storage materials [6,7]. Aurivillius compounds are constructed by n perovskite-like (A n-1 B n O 3n+1 ) 2-layers sandwiched between bismuth oxide layers (Bi 2 O 2 ) 2+ , stacked along the c-axis.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, structural analysis and dielectric properties of the double-layer Aurivillius compound Pb1-2Bi1.5+2La0.5Nb2-Mn O9

Wendari

Arief

Mufti

et al. 2019

Ceramics International

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The double-layer Aurivillius phases Pb 1-2x Bi 1.5+2x La 0.5 Nb 2-x Mn x O 9 (x = 0, 0.1, 0.3, and 0.5) were synthesized by a molten salt method using a mixture of K 2 SO 4 /Na 2 SO 4 . The effect of composition on the structure, morphology and dielectric properties was investigated. X-ray diffraction showed that single-phase samples with a non-polar, orthorhombic A2 1 am structure were obtained for x = 0, 0.1 and 0.3. The unit cell becomes more orthorhombic with increasing x as the degree of distortion of the BO 6 octahedra in the perovskite layer increases. Raman spectroscopy showed the typical modes of the orthorhombic double-layer Aurivillius structure and indicated that the La 3+ ions prefer to occupy the perovskite A-site, Mn 3+ occupies the B-site, and the Pb 2+ ions are found in the Bi 2 O 2 layer. The morphology of the samples was probed by scanning electron microscopy, which showed anisotropic, plate-like crystallites that increased in size with increasing x. The dielectric constant significantly increased with x, and the ferroelectric properties became more relaxor-like.

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Section: Introductionmentioning

confidence: 99%

Synthesis, structural analysis and dielectric properties of the double-layer Aurivillius compound Pb1-2Bi1.5+2La0.5Nb2-Mn O9

Wendari

Arief

Mufti

et al. 2019

Ceramics International

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“…The ions in the structure's packaging determine the type and possibility of the Aurivillius application [2]. One of the exciting properties of Aurvillius is ferroelectric, which can be applied as a storage material of Fe-RAM memory, capacitors, piezoelectric, conductor, catalyst, and as a magnetic material [3], [4]. To achieve the property, then Aurvillius doped with specific ions on bismuth oxide or perovskite layers.…”

Section: Introductionmentioning

confidence: 99%

Stability Study of Four Layer Aurivillius Oxide of AxBi4-xTi4O15 (A = Ca, Sr, Ba): Atomistic Simulation

et al. 2020

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Aurivillius is bismuth layered structure ferroelectrics that can be applied as memory, sensor, and catalyst. This research aimed to study the stability of AxBi4-xTi4O15 Aurivillius (A = Ca, Sr, and Ba). Dopants (A) partially substitute Bi at the sites of Bi(1) and Bi(2) of the perovskite layer. This research method is an atomistic simulation using by the GULP code. Simulations were carried out by means of AxBi4-xTi4O15 geometry optimization at constant pressure, using the Buckingham potential. The results showed that the increase in the concentration of dopants substituting Bi accompanied by an increase in lattice energies. The most stable Aurivillius was CaxBi4-xTi4O15 (x = 16.3%) carried out by Bi substitution at Bi(2) site, with lattice energy, -1668.227 eV. Aurivillius stability decreases by increasing the size of the dopant. The maximum concentration number of A dopant substituting Bi was discussed.

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Design of High‐Entropy Relaxor Ferroelectrics for Comprehensive Energy Storage Enhancement

Yang,

Liu,

Gong

et al. 2024

Adv Funct Materials

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For an ideal electrostatic energy storage dielectric capacitor, the pursuit of simultaneously high energy density and efficiency presents a formidable challenge. Typically, under an applied electric field, an increase in energy density is usually accompanied with a deteriorated energy storage efficiency due to the escalated hysteretic loss, which is harmful to the reliability of the capacitor. Thus, a well‐balanced performance of improved energy density and maintained high efficiency is highly demanded. In this work, a structure with amorphous phases embedded in polycrystalline nanograins using the entropy tactic, leading to a higher transport barrier of carrier is constructed. Hence, the hysteretic loss is largely suppressed at a high electric field and the high polarization is still sustained in the high‐entropy film. Consequently, an ultrahigh energy density of 139.5 J cm−3 with a high efficiency of 87.9%, and a high figure of merit of 1153 are simultaneously achieved in the high‐entropy Ba2Bi4Ti5O18‐based relaxor ferroelectric. This work offers a promising avenue in materials structure design for advanced high‐power energy storage applications.

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Lead-free Ba2Bi4Ti5O18 thin film capacitors for energy storage applications

Cited by 9 publications

References 16 publications

Synthesis, structural analysis and dielectric properties of the double-layer Aurivillius compound Pb1-2Bi1.5+2La0.5Nb2-Mn O9

Synthesis, structural analysis and dielectric properties of the double-layer Aurivillius compound Pb1-2Bi1.5+2La0.5Nb2-Mn O9

Stability Study of Four Layer Aurivillius Oxide of AxBi4-xTi4O15 (A = Ca, Sr, Ba): Atomistic Simulation

Design of High‐Entropy Relaxor Ferroelectrics for Comprehensive Energy Storage Enhancement

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