Leakage current characteristics of SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3 heterostructure thin films

Zhang, Yi; Chen, Xiaoyang; Xie, Bin; Wang, Zhi; Ding, Mengqi; He, Qiao; Ji, Hang; Mo, Taolan; Yu, Ping

doi:10.1007/s12598-020-01497-z

Cited by 8 publications

(4 citation statements)

References 30 publications

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“…Higher breakdown strengths were recently reported for modified heterostructure films with BST layers by Fan et al They reported a breakdown strength of 5MV/cm for their BST-BMN (0.88Ba 0.55 Sr 0.45 TiO 3 -0.12BiMg 2/3 Nb 1/3 O 3 ) films [23]. Zhang et al [24] reported a breakdown strength of 1.26MV/cm for a heterostructure of SrTiO 3 /LaNiO 3 /Ba 0.67 Sr 0.33 TiO 3 /SrTiO 3 . Debnath et al reported an average leakage current in the range of 100nA with a maximum memory window of 9V [25].…”

Section: Leakage Currentmentioning

confidence: 70%

Effect of Repeated Application of Switching Electric Field on Al/Ba0.9Sr0.1TiO3/Pt/Si and Al/Ba0.3Sr0.7TiO3/Pt/Si Thin Films

Lahiry

2023

J. Sci. Res.

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Repeated application of switching the electric field on the electrical properties of the films, such as variation of capacitance with voltage and leakage current, were studied on thin films of Al/Ba0.9Sr0.1TiO3/Pt/Si (BST-0.9) and Al/Ba0.3Sr0.7TiO3/Pt/Si (BST-0.3) prepared by sol-gel method. The ferroelectric BST-0.9 films that exhibited degradation by applying a switching electric field showed hysteresis. Paraelectric BST-0.3 films did not show any degradation on repeated application of switching electric field. The resistivity, breakdown field, and Devonshire thermodynamic coefficient C3 were calculated for all the films. These physical properties are essential in choosing a film for particular applications such as memory, dynamic random access memory, tunable phase shifter, photodiodes in light sensors, etc.

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Section: Leakage Currentmentioning

confidence: 70%

Effect of Repeated Application of Switching Electric Field on Al/Ba0.9Sr0.1TiO3/Pt/Si and Al/Ba0.3Sr0.7TiO3/Pt/Si Thin Films

Lahiry

2023

J. Sci. Res.

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“…In fact, according to some investigations, introducing LNO buffer layers can improve the dielectric response of BST solid solutions fabricated on Si plates. [ 21–27 ] Ba 0.67 Sr 0.33 TiO 3 thin films with 750 nm thickness were fabricated via radio‐frequency magnetron sputtering on LNO‐buffered Si substrates, and they displayed a high permittivity of ≈1320 and increased energy storage density. [ 21 ] When Chen et al [ 22 ] looked into the electrical characteristics of (Ba 0.67 Sr 0.33 TiO 3 /LaNiO 3 ) n thin films, they discovered that the tunability of BST/LNO can reach 30.5% at 300 kV cm −1 .…”

Section: Resultsmentioning

confidence: 99%

Optimized Tunability of Barium Strontium Titanate Thin Films onto Different Plates with Proper Buffer Layers

Dong

Liang

Hui

et al. 2022

Physica Status Solidi (b)

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Misfit strain, polarization, permittivity, and tunability of Ba x Sr1−x TiO3 (BST) thin films on various substrates with varied buffer layers are calculated by a modified thermodynamic model. The lattice parameters of the LaAlO3 (LAO), CaTiO3 (CT), BaZr0.25Ti0.75O3 (BZT), and MgO buffer layers grow consecutively as does the thermal expansion coefficient (TEC) of the Si, Ti, Ni, and stainless steel (SS) substrates. When the TEC of substrates is bigger (such as Ni, SS) than that of the films, introducing buffer layers with larger lattice parameters (such as BZT, MgO) can improve the permittivity and tunability. Conversely, inserting buffer layers with smaller lattice parameters (such as LAO, CT) can enhance the dielectric response when the TEC of substrates is smaller (such as Si, Ti) than that of the films. The relationship between the TEC of substrate and the lattice parameter of buffer layer is primarily linear for achieving high tunability. According to several references, introducing LaNiO3 buffer layers can significantly increase the tunability of BST solid solutions prepared on Si‐based substrates, which is in line with the estimated rule. This law offers a guide for choosing the best substrate and buffer layer when producing BST films with strong dielectric response.

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“…Artificial FM/FE multiferroic heterostructures are of great potential for devices due to their strong magnetoelectric (ME) coupling, that is, E-field regulates magnetism or vice versa. Various characteristics related to magnetics have been dominated by E-field in the multiferroic system, such as Curie temperature (T C ) [18][19][20], magnetic domain [20][21][22], magnetoresistance [23][24][25], and ferromagnetic resonance (FMR) [16,26].…”

Section: Introduction mentioning

confidence: 99%

Modulation of spin dynamics in Ni/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

Wang

et al. 2022

J Adv Ceram

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Motivated by the fast-developing spin dynamics in ferromagnetic/piezoelectric structures, this study attempts to manipulate magnons (spin-wave excitations) by the converse magnetoelectric (ME) coupling. Herein, electric field (E-field) tuning magnetism, especially the surface spin wave, is accomplished in Ni/0.7Pb(Mg1/3}Nb2/3})O3—0.3PbTiO3 (PMN—PT) multiferroic heterostructures. The Kerr signal (directly proportional to magnetization) changes of Ni film are observed when direct current (DC) or alternative current (AC) voltage is applied to PMN—PT substrate, where the signal can be modulated breezily even without extra magnetic field (H-field) in AC-mode measurement. Deserved to be mentioned, a surface spin wave switch of “1” (i.e., “on”) and “0” (i.e., “off”) has been created at room temperature upon applying an E-field. In addition, the magnetic anisotropy of heterostructures has been investigated by E-field-induced ferromagnetic resonance (FMR) shift, and a large 490 Oe shift of FMR is determined at the angle of 45° between H-field and heterostructure plane.

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Leakage current characteristics of SrTiO3/LaNiO3/Ba0.67Sr0.33TiO3/SrTiO3 heterostructure thin films

Cited by 8 publications

References 30 publications

Effect of Repeated Application of Switching Electric Field on Al/Ba<sub>0.9</sub>Sr<sub>0.1</sub>TiO<sub>3</sub>/Pt/Si and Al/Ba<sub>0.3</sub>Sr<sub>0.7</sub>TiO<sub>3</sub>/Pt/Si Thin Films

Effect of Repeated Application of Switching Electric Field on Al/Ba<sub>0.9</sub>Sr<sub>0.1</sub>TiO<sub>3</sub>/Pt/Si and Al/Ba<sub>0.3</sub>Sr<sub>0.7</sub>TiO<sub>3</sub>/Pt/Si Thin Films

Optimized Tunability of Barium Strontium Titanate Thin Films onto Different Plates with Proper Buffer Layers

Modulation of spin dynamics in Ni/Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure

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