Leakage current conduction behaviors of 0.65nm equivalent-oxide-thickness HfZrLaO gate dielectrics

Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics

“…8. Using a mathematical iteration method, the electron effective mass and barrier height at the Al/HfTiON interface were extracted to be about 0.10 m 0 and 0.81 eV, respectively, which is little smaller than £ B (0.94 eV) between Al and HfO 2 due to the reduction of band energy by incorporating Ti and N [35,39]. When the positive voltage is applied in the Al top electrodes (under substrate injection), the current varies linearly with the oxide field (Ohmic type conduction), in the 0-0.5 MV/cm range, as shown in Fig.…”

Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing

“…If the conduction current is governed by Schottky emission, a ln(J/T 2 ) versus E 1/2 plot should show a straight line and the slope will give the refractive index (n) and dynamic dielectric constant (ε r =n 2 ). 29 As can be seen in Fig …”

Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics

“…Schottky emission is a fieldassisted thermionic emission of an electron over a surface barrier, which is the most likely current conduction mechanism in gate dielectrics. The leakage current density governed by Schottky emission is expressed as [45]:…”