Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics

Zhang, J.W.; He, Gang; Liu, M.; Gao, Juan; Wang, Peihong; Shi, Shouhua; Zhang, M.; Chen, H.S.; Liu, Y.M.; Sun, Zhaoqi

doi:10.1016/j.jallcom.2015.05.103

Cited by 5 publications

(2 citation statements)

References 40 publications

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“…According to the slope of SE plots, the dynamic dielectric constant εr is 2.61, and refractive index is 1.62 calculated by n=εr 1/2 , which agree with results of previous reports [36][37][38].…”

Section: Leakage Current-conduction Mechanism Analysissupporting

confidence: 90%

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Gao

Xiao

et al. 2017

Journal of Materials Science & Technology

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Section: Leakage Current-conduction Mechanism Analysissupporting

confidence: 90%

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Gao

Xiao

et al. 2017

Journal of Materials Science & Technology

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“…One of the effective ways of increasing the crystallization temperature is combining HfO 2 with another complementary gate materials, such as titanium dioxide (TiO 2 ) [6]. Based on some references from the last ten years [6,12,13,18,19,[27][28][29][30][31], it can be noted that doping HfO 2 with TiO 2 can lead to receiving a higher dielectric constant and improvement of electrical properties. In turn, TiO 2 is an attractive material due to its very high dielectric constant (ε r ~ 80-110) and high crystallization temperature [6,13,22].…”

Section: Introductionmentioning

confidence: 99%

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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In this paper a comparison of electrical and optical properties of mixed hafnium-titanium oxides is described. Thin films were deposited with the use of the magnetron co-sputtering method. For further analysis (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71) Ox coatings, which were amorphous directly after the deposition process, were chosen,. Moreover, post-process annealing was also performed in order to compare the electrical and optical properties of amorphous and nanocrystalline thin films with the same material composition. It was found that the phase transition from amorphous to orthorhombic HfTiO 4 occurred in the case of (Hf 0.52 Ti 0.48)Ox coating at 650 °C. In turn, the phase transition to TiO 2-anatase was observed at the temperature of 600 °C in the case of (Hf 0.29 Ti 0.71)Ox thin film. The leakage current for both amorphous coatings was in the range of 10 −7-10 −8 A/cm 2. After additional annealing and phase transition, the leakage current slightly decreased for (Hf 0.29 Ti 0.71)Ox thin film, while in the case of (Hf 0.52 Ti 0.48)Ox sample the resistance switching effect was observed. The dielectric constant was equal to 24 and 25 for amorphous (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71)Ox films, respectively. However, after the phase transition it decreased to 15 for (Hf 0.52 Ti 0.48)Ox and increased to 51 for (Hf 0.29 Ti 0.71)Ox film. The results of optical studies showed that amorphous thin films were well transparent in a visible light range with an average transparency of ca. 85%. After the phase transition to HfTiO 4-orthorhombic and TiO 2-anatase, a slight decrease in the transparency level by 3% and a redshift of the cutoff wavelength was observed. Moreover, additional annealing caused small changes of the optical band gap energy, refractive index and extinction coefficient.

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Low leakage current of CdSe quantum dots/Si composite structure and its performance for photodiode and solar cell

Soylu

Al-Ghamdi

El-Tantawy

et al. 2016

Ceramics International

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Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics

Cited by 5 publications

References 40 publications

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Low leakage current of CdSe quantum dots/Si composite structure and its performance for photodiode and solar cell

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