Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

Roch, Alexandre Le; Goiffon, Vincent; Marcelot, Olivier; Paillet, Philippe; Pace, Federico; Belloir, Jean-Marc; Magnan, Pierre; Virmontois, Cédric

doi:10.3390/s19245550

Cited by 8 publications

(4 citation statements)

References 10 publications

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“…CIS column amplifier is widely realized by switch capacitor (SC) structure due to its low power consumption, high area efficiency, and high gain accuracy [25,26,27,28]. As discussed in Section 3, the reset voltage and signal voltage in one line-time are from two rows.…”

Section: Analog Readout For Pipeline Pixel Controlmentioning

confidence: 99%

A pipeline row operation method of CMOS image sensors

Fu²,

Jiang³

et al. 2021

IEICE Electron. Express

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In this paper, we present a pixel array operation method of CMOS image sensor that enables pipeline processing of pixel operations. The sensor frame rate constraint from the delay of pixel array control lines is much relieved by manipulating control phases of adjacent pixel rows simultaneously. An analog frontend readout circuit is proposed to support the row pipeline operation pixel readout. A prototype image sensor was designed with its performance characterized and analyzed.

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Section: Analog Readout For Pipeline Pixel Controlmentioning

confidence: 99%

A pipeline row operation method of CMOS image sensors

Fu²,

Jiang³

et al. 2021

IEICE Electron. Express

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“…It is generally known that ionizing radiation can degrade the performance of CIS in terms of increasing DC, SN leakage, RN, and RTN [25][26][27][28][29][30][31][32]. To study the radiation damage effects, several Chip-A samples are irradiated, while grounded, by 10 keV X-ray at CEA-DAM facility at room temperature, with 0 rad, 10 krad, 100 krad, 500 krad, 1 Mrad, 2 Mrad, 5 Mrad, 10 Mrad, and 20 Mrad (SiO 2 ) total ionizing dose (TID), respectively [23].…”

Section: Effects Of X-ray Radiation Damagementioning

confidence: 99%

“…The general effects of radiation damage on CIS and the design of radiation-hard CIS are outside the scope of this work [25][26][27][28][29][30][31][32]. Instead, X-ray irradiation is utilized as a tool to alter the composition of RTN types and to increase the number of RTN pixels for investigation.…”

Section: Introductionmentioning

confidence: 99%

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Chao

Yeh

et al. 2019

Sensors

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In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.

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“…These SPS arrays should possess a large area, low leakage currents, and high operating voltages, necessitating a specially optimized design of the sensor [10]. It is important to mention that achieving a uniform and low leakage current distribution in the sensor pixel array, especially in large-scale arrays, allows to significantly reduce the noise of the detection system and enhance its imaging quality [11]. Many studies have been conducted on the fabrication of SPS with higher breakdown voltage [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Ultra-large scale array silicon pixel sensors with uniform and low leakage current for advanced X-ray light sources

Sun,

Lu,

et al. 2024

J. Inst.

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The development of silicon pixel sensors (SPS) with high operating voltage, low leakage currents, and large arrays can contribute to improving the energy and spatial resolution of advanced X-ray light source detection systems. The Future Detection System comprises a hybrid-pixel detector with a collective resolution of 2048 × 2048 pixels, each measuring 100 μm× 100 μm. It consists of 16 p-i-n SPSs, where each sensor has an array size of 1024× 256 pixels. In this paper, the design of the pixel and guard rings is optimized to achieve uniform and ultra-low pixels leakage currents under high operating voltage. The high leakage current uniformity of the designed sensor is demonstrated through several tests conducted on small scale array SPS. The leakage current of the tested pixels is in the range of 0.50–0.55 pA at room temperature with less than 5% leakage deviation on the whole array. It is accompanied by breakdown voltages greater than 1000 V. The optimized 256× 128 pixel SPS showcases uniform leakage currents below 0.6 pA per pixel at room temperature, as evidence in both the edge and central pixels. The 1024× 256 pixels SPS is then manufactured based on the optimized design results. The obtained results show that the breakdown voltage is greater than 1000 V and the leakage current of the pixel is less than 2.5 pA. In addition, the interpixel capacitance of the sensor also reach an ultra-low level of 16 fF. This study paves the way for the development of a robust semiconductor device solution for applications where ultra-fast and large panel-pixel detectors in advanced X-ray light source detection systems are required.

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Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

Cited by 8 publications

References 10 publications

A pipeline row operation method of CMOS image sensors

A pipeline row operation method of CMOS image sensors

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

Ultra-large scale array silicon pixel sensors with uniform and low leakage current for advanced X-ray light sources

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