Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05) 2005
DOI: 10.1109/iwsoc.2005.78
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Leakage current variability in nanometer technologies

Abstract: The dramatic increase in leakage current coupled with the large increase in variability in highly scaled CMOS technologies, pose a major challenge for future IC design. Leakage variability can not be neglected anymore, due to the increase of leakage power percentage in modern ICs. In this paper, the main sources of variations and how they impact leakage current are discussed. Design guidelines to reduce variability based on several leakage reduction techniques are also presented. It is shown that reverse body … Show more

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Cited by 23 publications
(9 citation statements)
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“…The nominal value of lint is 7.5 nm and its standard deviation is set to 3 nm based on the observation that effective transistor length has a 3σ value that is 10% of overall transistor length [1] …”
Section: Process Variationmentioning
confidence: 99%
“…The nominal value of lint is 7.5 nm and its standard deviation is set to 3 nm based on the observation that effective transistor length has a 3σ value that is 10% of overall transistor length [1] …”
Section: Process Variationmentioning
confidence: 99%
“…Given any pair of components, Xi and Xj, we denote their correlation as either cor(Xi,Xj) or ρi,j. This Correlation is defined as ρ i,j = cov(Xi,Xj) / (σ i σ j ) (1) where σi and σj are the standard deviations of Xi and Xj.…”
Section: B Correlation Matrixmentioning
confidence: 99%
“…This increased variability in advanced CMOS technologies is playing an increased role in determining the total leakage of a chip. This has accentuated the need to statistically account for leakage variations during the design cycle [1]. Designing for worst case leakage may cause excessive guard-banding, resulting in lower performances.…”
Section: Introductionmentioning
confidence: 99%
“…Process variations are fluctuations around the desired value of design parameters introduced during chip device fabrication [4]. The process variations are, inter-die (die-to-die) and intra-die (within-die).…”
Section: Process Variationsmentioning
confidence: 99%
“…In today's designs, the yield is determined according to the operating frequency and the leakage power [4].…”
Section: Process Variationsmentioning
confidence: 99%