LEED intensity and surface core level shift analysis of the MBE-prepared surface

Setzer, Carsten; Platen, J.; Bludau, H.; Gierer, M.; Over, Herbert; Jacobi, K.

doi:10.1016/s0039-6028(97)01060-1

Cited by 20 publications

(13 citation statements)

References 13 publications

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“…After this paper was submitted, we became aware of a new quantitative LEED intensity analysis of GaAs(1 1 1) (2ϫ2). 20 While details of the LEED analysis have yet to be published, the authors of the new work have provided a summary of the structural results, 20 which are in very good agreement with the present work. Comparing the major structural numbers, the As-As bond length in the trimer is 2.44 Å ͑this work͒, compared to 2.37 Å.…”

supporting

confidence: 79%

“…Comparing the major structural numbers, the As-As bond length in the trimer is 2.44 Å ͑this work͒, compared to 2.37 Å. 20 The trimer layer is d 1 ϭ2.35 Å above the bilayer below ͑this work͒, compared to 2.29 Å. 20 Most important, both works find that the three As atoms below the trimer are pushed substantially downward, resulting in a much compressed bilayer distance of 0.51 Å ͑this work͒, compared to 0.56 Å.…”

mentioning

confidence: 98%

“…20 The trimer layer is d 1 ϭ2.35 Å above the bilayer below ͑this work͒, compared to 2.29 Å. 20 Most important, both works find that the three As atoms below the trimer are pushed substantially downward, resulting in a much compressed bilayer distance of 0.51 Å ͑this work͒, compared to 0.56 Å. 20 Both works find that the fourth As atom ͑atom 1͒ is raised by 0.66 Å ͑this work͒, compared to 0.56 Å.…”

mentioning

confidence: 99%

“…20 Both works find that the fourth As atom ͑atom 1͒ is raised by 0.66 Å ͑this work͒, compared to 0.56 Å. 20 This work was supported in part by HK RGC Grant No. …”

mentioning

confidence: 99%

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Multilayer structural determination of theGaAs(1¯1¯1¯)2×2reconstruction by automated tensor LEED

Deng

et al. 1999

Phys. Rev. B

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The multilayer atomic coordinates for the GaAs(1 1 1 )(2ϫ2) surface have been determined using automated tensor low-energy electron diffraction. The results confirm the As adatom trimer model found by total-energy calculations and scanning tunneling microscopy studies although details of the displacements are different. The low-energy electron diffraction analysis, being sensitive to multilayer spacings in the surface region, shows that substantial subsurface relaxations are present. ͓S0163-1829͑99͒15115-4͔

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supporting

confidence: 79%

mentioning

confidence: 98%

mentioning

confidence: 99%

“…20 Both works find that the fourth As atom ͑atom 1͒ is raised by 0.66 Å ͑this work͒, compared to 0.56 Å. 20 This work was supported in part by HK RGC Grant No. …”

mentioning

confidence: 99%

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Multilayer structural determination of theGaAs(1¯1¯1¯)2×2reconstruction by automated tensor LEED

Deng

et al. 1999

Phys. Rev. B

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“…The As-terminated, or GaAs(1 1 1)B, surface is characterised by an As trimer per unit surface cell. Deposition of Group-V elements such as As, Sb and Bi on the GaAs(1 1 1)B surface also forms well ordered reconstructions [1][2][3][4]. Theoretical investigations [5,6] of such systems have provided support to experimental work.…”

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confidence: 84%

Atomic geometry and electronic states on GaAs(111)A–Se()

2004

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Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

Lin

Chang

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications.

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LEED intensity and surface core level shift analysis of the MBE-prepared surface

Cited by 20 publications

References 13 publications

Multilayer structural determination of theGaAs(1¯1¯1¯)2×2reconstruction by automated tensor LEED

Multilayer structural determination of theGaAs(1¯1¯1¯)2×2reconstruction by automated tensor LEED

Atomic geometry and electronic states on GaAs(111)A–Se()

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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