Length Scaling of Carbon Nanotube Electric and Photo Diodes down to Sub-50 nm

Xu, Haitao; Wang, Sheng; Zhang, Zhiyong; Peng, Lian‐Mao

doi:10.1021/nl502534j

Cited by 25 publications

(35 citation statements)

References 38 publications

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“…Currently, the typical pitch size of a CNT photodiode has been scaled down to sub-50 nm (ref. 39). Top-layer data (0 and 1 binary signal strings) stored in the memory cells can be shifted to the 2D array of transmitters, mapped to the 2D array of receivers in the bottom layer in parallel and then shifted to adjacent digital circuits (for example, CPU) for logic operations (Supplementary Fig.…”

Section: Discussionmentioning

confidence: 99%

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

et al. 2017

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Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

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Section: Discussionmentioning

confidence: 99%

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

et al. 2017

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“…[ 50,51 ] To fabricate small footprint photodiodes in large scale is highly desirable in CMOS imaging. [ 19 ] Briefl y, p-type and n-type contact are separately defi ned fi rst on CNT, following with deposition of metal fi lm such as Pd and Sc or Y (e.g., thickness of 60 nm). [ 50 ] Although CNT-based nanoscale diode has been forecast through theoretical calculation, experimental fabrication of diodes through both chemical doping and static split-gate doping method are usually larger than micrometers, giving rise to no advantage to realize device miniaturization over silicon.…”

Section: Scaling and Sub-100 Nm Cnt Bfbdsmentioning

confidence: 99%

“…[ 19 ] Figure 3 b shows a typical output characteristic of such a small BFBD device, which behaves as a typical rectifi cation device. [ 19 ] Figure 3 b shows a typical output characteristic of such a small BFBD device, which behaves as a typical rectifi cation device.…”

Section: Scaling and Sub-100 Nm Cnt Bfbdsmentioning

confidence: 99%

“…

PV) devices, direct-bandgap, broad spectral response, large absorption coeffi cient and fast response speed on the order of picosecond, etc. [14][15][16][17][18][19][20] Here, the fundamental properties of CNT energy band structure and corresponding optical characteristics are reviewed. Optoelectronic research has been focused mainly on nanoscale light-emitting diode (LED), photodetector, solar cell and novel physical discoveries such as two-photon absorption, multi-excitons generation, photovoltage multiplication and so on.

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Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Wang

Peng

2016

Advanced Energy Materials

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PV) devices, direct-bandgap, broad spectral response, large absorption coeffi cient and fast response speed on the order of picosecond, etc. [ 4,6,12,13 ] Tremendous efforts have been made to convert the excellent intrinsic properties of CNTs into high-performance devices. Optoelectronic research has been focused mainly on nanoscale light-emitting diode (LED), photodetector, solar cell and novel physical discoveries such as two-photon absorption, multi-excitons generation, photovoltage multiplication and so on. [14][15][16][17][18][19][20] Here, the fundamental properties of CNT energy band structure and corresponding optical characteristics are reviewed. Then photovoltaic research developments of various kinds of CNT diodes, with particular emphasis on barrier-free-bipolar-diode (BFBD) devices fabricated via a dopingfree method are discussed. For pushing CNT PV devices toward applications, the status of CNT thin-fi lm-based PV devices, including recent breakthroughs made on solution-processed semiconducting CNT separation techniques, and the utilization of these materials for constructing high-performance PV diodes are discussed. The doping-free technique has been combined with virtual contacts to multiply photovoltage and thus to signifi cantly improve the performance and signal to noise ratio of PV devices. It is demonstrated that CNT PV device has a superior broadband response from visible to near infrared, high room temperature detectivity that can be compared with state-of-the-art InGaAs detectors, and extremely good temperature and temporal stability. This article will end with a discussion on the challenges that still lay ahead, and possible solutions. Basic Optical Properties of Carbon NanotubesAs shown in Figure 1 a, a CNT is composed of hexagonal honeycomb sp 2 lattice, and various chirality CNTs can be formed with different orientations relative to the tube axis, giving rise to distinct properties of either semiconducting or metallic. [ 21 ] Semiconducting CNTs have been recommended as the potential channel material for replacing silicon to extend Moore's law. [ 5 ] However, beyond Moore, it is also of great signifi cance to build high-performance optoelectronic devices and circuits. [ 12,22 ] The excellent properties of CNT stem from its basic band structure, which is signifi cant to discuss its unique physical Photovoltaic (PV) infrared (IR)-based devices are important for a variety of industrial and scientifi c applications, such as IR imaging, biological sensing, day-night surveillance and in solar cells. However, most high-end IR PV devices made of conventional semiconductors need to be cooled to achieve high performance, while these materials usually are also not stable under strong illumination. Carbon nanotubes (CNTs) are direct-bandgap materials with a broad spectral response and a large absorption coeffi cient, which is most desired for building high-performance PV devices. Main progresses on CNT PVs in the past 15 years is reviewed, emphasizing recent breakthrough of CNT IR photodetectors b...

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“…For photodiodes based on SWCNTs, p-n junction diodes with split-gate geometry [10][11][12][13][14] and asymmetrically contacted barrier-free bipolar diodes (BFBDs) [15][16][17][18][19] are two of the most widely-studied structures. With regard to the p-n junction diodes, several works have revealed the electrostatic properties and quantum efficiency of the devices.…”

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