Light Extraction Improvement From GaN-Based Light-Emitting Diodes With Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Taguchi, Dai; Zhang, Bei; Kang, Xiang Ning; Bao, Kui; Zhao, Wen Zhu; Xu, Dong; Zhang, Guo Yi; Gan, Z. Z.

doi:10.1109/lpt.2008.2005645

Cited by 19 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, metallic nanotextured reflectors are also widely used to improve the light scattering effect and provide a greater chance for the trapped light to be extracted [12][13][14][15][16][17][18] . However, most previous works neglect the metal loss caused by the SP intrinsic absorption in the metallic nanotextured reflectors, which often occur in SP-based devices [19] .…”

Section: Introductionmentioning

confidence: 99%

“…The energy transferred to the SP mode will quickly be dissipated through two channels. One is light re-radiation with the same photon energy of the incident light but with a changed radiation direction, which leads to the strong light scattering effect and an enhanced light extraction; the other channel is the metal intrinsic absorption as heating loss which cause the serious performance degradation of the optoelectronic devices [19] . Here, the influence of the metal intrinsic absorption of the metallic nanotextured reflectors on the LEDs optoelectronic properties were investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Sun

Zhang

et al. 2019

J. Semicond.

View full text Add to dashboard Cite

Metallic nanotextured reflectors have been widely used in light emitting diodes (LEDs) to enhance the light extraction efficiency. However, the light absorption loss for the metallic reflectors with nanotexture structure is often neglected. Here, the influence of absorption loss of metallic nanotextured reflectors on the LED optoelectronic properties were studied. Two commonly used metal reflectors Ag and Al were applied to green GaN-based LEDs. By applying a Ag nanotextured reflector, the light output power of the LEDs was enhanced by 78% due to the improved light extraction. For an Al nanotextured reflector, however, only a 6% enhancement of the light output power was achieved. By analyzing the metal absorption using finite-difference timedomain (FDTD) and the metal reflectivity spectrum, it is shown that the surface plasmon (SP) intrinsic absorption of metallic reflectors with nanotexture structure play an important role. This finding will aid the design of the high-performance metal nanotextured reflectors and optoelectronics devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Sun

Zhang

et al. 2019

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…The enhancement of IQE has been generally realized by tailoring the epitaxial structure, [3][4][5][6][7] or incorporation of plasmonic nanostructures. [8][9][10] Meanwhile, LEE can be improved by patterning the substrate, 11,12 using epitaxial structure 13,14 or current spreading layers, 15,16 fabricating different LED configurations (conventional, flip-chip or vertical), or including photonic crystals. [17][18][19] Flip-chip LEDs (FCLEDs) possess a suitable configuration for high-power devices because of their effectiveness at increasing LEE and heat dissipation.…”

Section: Introductionmentioning

confidence: 99%

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Hasanov

Zhu

Sharma

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

In this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in detail. InGaN/GaN multiple quantum well LEDs with a Ni/Ag/TiW metal stack are found to tolerate high-temperature annealing better than those with a Ni/Ag metal stack. Highly improved current-voltage characteristics and enhanced optical output power are achieved for the devices with a TiW thin layer. These changes are ascribed to the higher reflectivity, smoother surface, and better ohmic properties of the device containing TiW after annealing. Better heat management of the device with TiW is demonstrated by comparing electroluminescence spectra of the two device structures. Overall, these factors resulted in devices with TiW exhibiting a higher external quantum efficiency than devices without TiW. Detailed x-ray photoelectron spectroscopy analyses of the reflector metal stacks reveal little intermixing of the layers after annealing in the devices with TiW. The results show that incorporation of TiW is a promising approach for the fabrication of high-performance InGaN/GaN flip-chip LEDs. V

show abstract

“…5) Recently, extensive research has focused on the use of a roughened indium tin oxide (ITO) surface to improve the performance of LEDs. [13][14][15][16][17] However, some of these techniques need either nanoimprinting equipment or an electronic beam lithography (EBL) system, which are considered to be too complex and costly to be applied in commercial production. In addition, some methods cannot provide a wafer-level uniform rough surface.…”

mentioning

confidence: 99%

“…In addition, some methods cannot provide a wafer-level uniform rough surface. 16) Moreover, some of the proposed techniques may deteriorate the electrical properties of conventional LEDs. 17) In ref.…”

mentioning

confidence: 99%

Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Zhang¹,

Li²,

Wei³

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this study, enhanced light output power in GaN-based light-emitting diodes (LEDs) with a nanotextured indium tin oxide (ITO) transparent conductive layer was observed. Wafer-scale self-assembled cesium chloride nanospheres were formed on the ITO transparent conductive layer and served as the mask in a dry etching process. After the inductively coupled plasma (ICP) etching process, nanoscale islands were fabricated on the ITO layer. Compared with LEDs with a planar ITO layer, the light output power of LEDs with a nanotextured ITO layer was improved by 23.4%. Optoelectronic measurement showed that the performance of the fabricated LEDs was greatly enhanced.

show abstract

Light Extraction Improvement From GaN-Based Light-Emitting Diodes With Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Cited by 19 publications

References 11 publications

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Contact Info

Product

Resources

About