A remarkable manifestation of the quantum character of electrons in matter is offered by graphene, a single atomic layer of graphite. Unlike conventional solids where electrons are described with the Schrödinger equation, electronic excitations in graphene are governed by the Dirac hamiltonian 1 . Some of the intriguing electronic properties of graphene, such as massless Dirac quasiparticles with linear energy-momentum dispersion, have been confirmed by recent observations 2-5 . Here, we report an infrared spectromicroscopy study of charge dynamics in graphene integrated in gated devices. Our measurements verify the expected characteristics of graphene and, owing to the previously unattainable accuracy of infrared experiments, also uncover significant departures of the quasiparticle dynamics from predictions made for Dirac fermions in idealized, freestanding graphene. Several observations reported here indicate the relevance of many-body interactions to the electromagnetic response of graphene.We investigated the reflectance R(ω) and transmission T (ω) of graphene samples on a SiO 2 /Si substrate (inset of Fig. 1a) as a function of gate voltage V g at 45 K (see the Methods section). We start with data taken at the charge-neutrality point V CN : the gate voltage corresponding to the minimum d.c. conductivity and zero total charge density (inset of Fig. 1c). Figure 1a shows R(ω) of a graphene gated structure (graphene/SiO 2 /Si) at V CN = 3 V normalized by reflectance of the substrate R sub (ω). R sub (ω) is dominated by a minimum around 5,500 cm −1 due to interference effects in SiO 2 . A remarkable observation is that a monolayer of undoped graphene markedly modifies the interference minimum of the substrate leading to a suppression of R sub (ω) by as much as 15%. This observation is significant because it enables us to evaluate the conductivity of graphene near the interference structure, as will be discussed below.Both reflectance and transmission spectra of graphene structures can be modified by a gate voltage. Figure 1b,c shows these modifications at various gate voltages normalized by data atThese data correspond to the Fermi energy E F on the electron side and similar behaviour was observed with E F on the hole side (not shown). At low voltages (<17 V), we found a dip in R(V )/R(V CN ) spectra. With increasing bias, this feature evolves into a peak-dip structure and systematically shifts to higher frequency. The T (V )/T (V CN ) spectra reveal a peak at all voltages, which systematically hardens with increasing bias. A voltage-induced increase in transmission (T (V )/T (V CN ) > 1) signals a decrease of the absorption with bias. Most interestingly, we observed that the frequencies of the main features in R(V )/R(V CN ) and T (V )/T (V CN ) all evolve approximately as √ V . To explore the quasiparticle dynamics under applied voltages, it is imperative to first discuss the two-dimensional (2D) optical conductivity of charge-neutral graphene, σ 1 (ω, V CN ) + iσ 2 (ω, V CN ), extracted from a multilayer analy...