Linear and Nonlinear Optical Properties of Single GaAs Nanowires with Polytypism

Pimenta, A. C. S.; Teles-Ferreira, Danielle Cristina; Roa, Daniel Bretas; Moreira, M. V. B.; Oliveira, A. G. de; González, J. C.; Giorgi, Milena De; Sanvitto, D.; Matinaga, F. M.

doi:10.1021/acs.jpcc.6b04458

Cited by 30 publications

(15 citation statements)

References 29 publications

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“…The TEM image at the bottom of Fig. 1 shows the typical morphology of the GaAs nanowire, with an axial segmented structure created by the presence of WZ/ZB polytypism [14,17–19]. Fig.…”

Section: Methodsmentioning

confidence: 99%

Substrate and Mg doping effects in GaAs nanowires

Kannappan¹,

Sédrine²,

Teixeira³

et al. 2017

Beilstein J. Nanotechnol.

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Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2 /Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested.

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“…The TEM image at the bottom of Fig. 1 shows the typical morphology of the GaAs nanowire, with an axial segmented structure created by the presence of WZ/ZB polytypism [14,17–19]. Fig.…”

Section: Methodsmentioning

confidence: 99%

Substrate and Mg doping effects in GaAs nanowires

Kannappan¹,

Sédrine²,

Teixeira³

et al. 2017

Beilstein J. Nanotechnol.

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“…Molecules with large second‐ and third‐order nonlinearity have outstanding impact in optical information technology, data storage, optical sensing, and opto‐electronic devices . The flow of electrons from the donor to acceptor through π‐conjugation in organic molecules results in intramolecular charge transfer (ICT), which is mainly influenced by electron‐donating and electron‐withdrawing nature of the functional groups .…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical investigation of linear and nonlinear optical properties of ethyl‐3‐hydroxy‐2‐napthoate azo dyes by solvatochromic, computational aspects, and Z‐scan technique

Yadav

Taware

Sreenath³

et al. 2020

J of Physical Organic Chem

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To investigate the effect of substituents in azo dyes on their nonlinear optical properties, four azo dyes were synthesized using ethyl‐3‐hydroxy‐2‐naphthoate as a coupler and characterized. The polarizability (α) and hyperpolarizability (β and γ) constants were determined by using solvatochromic and computational method. A group of global hybrid and range seperated hybrid functionals having different Hartree‐Fock exchange percentage were used to evaluate the NLO properties. The functional ωB97 and ωB97XD performed better in the determination of polarizability (α) and hyperpolarizability (β and γ), respectively. The observed results for polarizability and hyperpolarizability parameters were supported by highest occupied molecular orbital‐lowest unoccupied molecular orbital (HOMO‐LUMO) energy gap, Hammett‐coefficient (σ), excited‐state coefficients (σex), and hyper‐hardness (Γ) values. Third‐order NLO properties were analyzed by using Z‐scan technique. The –OCH3 substituted dye 4d shows higher value of molecular susceptibility (χ(3)), polarizability (α), and hyperpolarizability (β and γ) parameters among the studied azo dyes. They are likely to have the potential applications in optoelectronics and photonics.

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“…In fact, it is well known that in the presence of antennas made of two or more unitary cells separated by a small gap, when magnetic dipoles couple with each other, an enhanced magnetic field is expected, in analogy with the case of electric dipoles [11,12]. Moreover, the use of resonant nanostructures made of semiconductor materials with strong second-or third-order nonlinear optical susceptibilities, such as GaP, AlGaAs, GaAs or Si and Ge, respectively, provided a new paradigm for nonlinear nanophotonics [13][14][15][16][17][18]. For example, AlGaAs nanodisk resonators yield second-harmonic generation (SHG) from near-infrared optical pump beams with unprecedented conversion efficiency up to about 0.01% [19].…”

Section: Introductionmentioning

confidence: 99%

Second Harmonic Beam Shaping and Sensing in Dielectric Bow-Tie Antenna via Convex Optimization Array Synthesis Approach

et al. 2019

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We propose a convex optimization approach for an array synthesis pattern to enhance the electromagnetic field in the gap region of a dielectric bow-tie antenna. This method allows the induction of the desired antenna modes by exploiting the concurrent excitation of the structure with plane waves with different propagation directions and complex amplitudes. By engineering the excitation coefficients of the array, different modes are excited in the bow-tie antenna and the radiation pattern of the generated second harmonic (SH) field is modified accordingly. Using our approach, we demonstrate both the feasibility of performing synthesis of the SH radiation pattern in dielectric antennas and the possibility of developing innovative sensing applications in photonics.Electronics 2019, 8, 901 2 of 11 causes a change in the scattered field, and this can be modelled at first order as a modulation of the 217 phase and amplitude of the incident plane waves. To make the discussion as simple as possible, yet 218 capturing the main idea we want to exploit here, we model the perturbing object as an extra phase 219 term in only one of the incident plane waves (see caption of Figure 1). This model is exact only when 220 the perturbing object is a slab that ensures high transmission with a fixed phase delay. To provide a 221 more realistic scenario, in the Appendix, we also describe the case where the perturbation is due to 222 the presence of a small dielectric particle. Let us define a figure of merit (FOM) as the ratio between 223 the far field at θ = π/2 in the absence of the simple perturbation (i.e., when ϕ = 0) with respect to the 224 far field in the presence of the perturbation (i.e., ϕ ≠ 0). Figure 5 summarizes the obtained results. 225FOM values of the bow-tie nanoantenna-based platform in the nonlinear regime are significantly higher 226 than those featured in the linear regime in the range 0 < ϕ < 3/2π. As can be seen in Figure 5b,c, the far 227 field of the SH signal is dramatically modified when ϕ = π while no significant variations are detected 228 for the FW radiation pattern. Although this is a preliminary analysis of this phenomenon, the 229 advantage of using the SH radiation pattern for sensing applications is clear. However, by further 230 engineering the nanoantenna geometries to attain higher nonlinearities, SH bow-tie sensing 231 platforms have the potential to overcome standard linear platform performances.

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Linear and Nonlinear Optical Properties of Single GaAs Nanowires with Polytypism

Cited by 30 publications

References 29 publications

Substrate and Mg doping effects in GaAs nanowires

Substrate and Mg doping effects in GaAs nanowires

Experimental and theoretical investigation of linear and nonlinear optical properties of ethyl‐3‐hydroxy‐2‐napthoate azo dyes by solvatochromic, computational aspects, and Z‐scan technique

Second Harmonic Beam Shaping and Sensing in Dielectric Bow-Tie Antenna via Convex Optimization Array Synthesis Approach

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