We
present a study of the atom–surface interaction potential
for the He–Bi2Se3(111) system. Using
selective adsorption resonances, we are able to obtain the complete
experimental band structure of atoms in the corrugated surface potential
of the topological insulator Bi2Se3. He atom
scattering spectra show several selective adsorption resonance features
that are analyzed, starting with the free-atom approximation and a
laterally averaged atom–surface interaction potential. Based
on quantum mechanical calculations of the He–surface scattering
intensities and resonance processes, we are then considering the three-dimensional
atom–surface interaction potential, which is further refined
to reproduce the experimental data. Following this analysis, the He–Bi2Se3(111) interaction potential is best represented
by a corrugated Morse potential with a well depth of D = (6.54 ± 0.05) meV, a stiffness of κ = (0.58 ±
0.02) Å–1, and a surface electronic corrugation
of (5.8 ± 0.2)% of the lattice constant. The experimental data
may also be used as a challenging benchmark system to analyze the
suitability of several van der Waals approaches: the He–Bi2Se3(111) interaction captures the fundamentals
of weak adsorption systems where the binding is governed by long-range
electronic correlations.