Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold Photoemitter

Antypas, G. A.; James, L. W.

doi:10.1063/1.1659183

Cited by 91 publications

(26 citation statements)

References 12 publications

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“…Direct-gap bowing parameters in the range 1.0-1.2 eV have been determined by a number of workers from absorption measurements. [530][531][532][533][534][535] It was noted in the first study 536 of epitaxial GaAs 0.5 Sb 0.5 on InP in 1984 that the apparent band gap of 0.804-0.807 eV was smaller than that implied by previously determined bowing parameters. [537][538][539] Recently, a low-temperature E g ⌫ of 0.813 eV was measured by Merkel et al 540 and Hu et al, 541 and its temperature dependence was obtained.…”

Section: Arsenides Antimonides 1 Gaassbmentioning

confidence: 87%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,663

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: Arsenides Antimonides 1 Gaassbmentioning

confidence: 87%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,663

289

3,822

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“…for a pseudo-regular solution model with an interaction parameter varying linearly with temperature have given good results in some cases [3], [4]. The more general quasi-chemical equilibrium model with temperature-independent interchange energy leads to a satisfactory representation of the binary and ternary phase diagrams for some metallic systems [5] and for combinations of elements from group III, IV and V [6], [7], [8].…”

mentioning

confidence: 99%

Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution model

Laugier

1973

Rev. Phys. Appl. (Paris)

136

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To cite this version:A. Laugier. Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution model. Revue de Physique Appliquee, 1973, 8 (3) Abstract. 2014 The thermodynamic properties and the T-x phase diagrams for liquid-solid equilibrium in II-VI and IV-VI ternary systems are described by a regular associated liquid solution model derived from that used by Jordan for ZnTe and CdTe and by the regular approximation for the solid solution. For the pseudo-binary systems exhibiting miscibility in both phases and monotonic variation of the liquidus and solidus curves, a general expression is obtained. It is independent of the interactions in the liquid, and is the same as for ideal non associated liquids. In the calculation of the ternary T-x phase diagrams five parameters are needed : the two interaction parameters 03B11, 03B12, the two coefficients of dissociation, 03B21, 03B22, obtained from the respective binary liquidus, and the interaction parameter W in the solid, derived from the pseudo-binary phase diagrams. Good agreement with experimental data is obtained for the pseudo-binary systems : ZnTe-CdTe, ZnTe-HgTe, ZnSe-ZnTe, CdTe-HgTe, CdTe-CdSe, HgTe-HgSe, PbSe-PbTe, PbTe-SnTe, and for the ternary systems : Zn-Cd-Te and Pb-Sn-Te. The theory is especially suited for the case 03B2 ~ 0 and 03B1 is small. It is applied to the calculation of the chalcogen-rich part of the ternary systems : Cd-Hg-Te and Cd-Se-Te.

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“…The spectra are normalized to the respective Ga(As,Sb) type-I emission around 1.15 eV [11,12] and shifted vertically for clarity. At approx.…”

Section: Resultsmentioning

confidence: 99%

Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

Gies

Holz²,

Fuchs³

et al. 2016

Nanotechnology

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Abstract. (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures have been investigated using continuous wave and time-resolved photoluminescence spectroscopy at various temperatures. A complex interplay was observed between the excitonic type-II transitions with electrons in the (Ga,In)As well and holes in the Ga(As,Sb) well and the type-I excitons in the (Ga,In)As and Ga(As,Sb) wells. The type-II luminescence exhibits a strongly non-exponential temporal behavior below a critical temperature of T c = 70 K. The transients were analyzed in the framework of a rate-equation model. It was found that the exciton relaxation and hopping in the localized states of the disordered ternary Ga(As,Sb) are the decisive processes to describe the dynamics of the type-II excitons correctly.

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Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold Photoemitter

Cited by 91 publications

References 12 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution model

Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

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