2008
DOI: 10.1063/1.2920189
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Lithographic alignment to site-controlled quantum dots for device integration

Abstract: We report on a scalable fabrication technology for devices based on single quantum dots (QDs) which combines site-controlled growth of QDs with an accurate alignment procedure. Placement of individual QDs and corresponding device structures with a standard deviation of around 50nm from the target position was achieved. The potential of the technology is demonstrated by fabricating arrays of mesas, each containing one QD at a defined position. The presence of single, optically active QDs in the mesas was probed… Show more

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Cited by 106 publications
(77 citation statements)
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“…A number of works have reported a bare cavity Q in GaAs photonic crystal cavities exceeding 250,000 43,44 , which could potentially enable both efficient on-chip coupling and high cooperativity. Employing regulated quantum dot growth techniques 45,46 in conjunction with local frequency tuning 47 could further open up the possibility to integrate multiple switches on a single semiconductor chip. Ultimately, solid-state quantum phase switches could play an important role in scaling semiconductor quantum devices to more complex quantum systems for applications in quantum networking, computation, and simulation.…”
Section: Discussionmentioning
confidence: 99%
“…A number of works have reported a bare cavity Q in GaAs photonic crystal cavities exceeding 250,000 43,44 , which could potentially enable both efficient on-chip coupling and high cooperativity. Employing regulated quantum dot growth techniques 45,46 in conjunction with local frequency tuning 47 could further open up the possibility to integrate multiple switches on a single semiconductor chip. Ultimately, solid-state quantum phase switches could play an important role in scaling semiconductor quantum devices to more complex quantum systems for applications in quantum networking, computation, and simulation.…”
Section: Discussionmentioning
confidence: 99%
“…The maturing site-control technology has naturally led to quantum dot nucleation in registry with marker structures that permit alignment of devices fabricated in subsequent processing steps [37]. This approach has been used for the deterministic integration of quantum dots with top-down devices such as cavities [38][39][40] and gated structures [41], the latter used for electric field tuning of the dot charge state [42] or manipulation of the electron and hole wavefunctions [43,44].…”
Section: Introductionmentioning
confidence: 99%
“…1. Details on the growth of the site controlled quantum dots can be found in [28,29] and will be briefly reviewed. The single site controlled InAs QDs described in this letter were grown on stacks of two InAs layers to increase the distance of the QD to the regrowth surface and to reduce the detrimental effect of the etched pits in the regrowth surface on the optical properties of the single QDs.…”
Section: Quantum Dot Growthmentioning
confidence: 99%
“…Possible routes to control the QD position in single micropillar structures include high resolution micro photoluminescence (micro--PL) scanning of a planar sample and subsequent device processing with respect to the QDs [26,27]. Yet the fully scalable integration of single QDs in the centre of micropillar resonators is expected to very likely require (445) site controlled QD (SCQD) growth and subsequent device alignment [28,29].…”
Section: Introductionmentioning
confidence: 99%